LNA2904L Panasonic - SSG, LNA2904L Datasheet

IR LED 950NM 20 DEG T1-3/4

LNA2904L

Manufacturer Part Number
LNA2904L
Description
IR LED 950NM 20 DEG T1-3/4
Manufacturer
Panasonic - SSG
Datasheet

Specifications of LNA2904L

Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
10mW/sr @ 20mA
Wavelength
950nm
Voltage - Forward (vf) Typ
1.35V
Viewing Angle
40°
Orientation
Top View
Mounting Type
Through Hole
Package / Case
T 1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
LN166
LN166

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LNA2904L
Manufacturer:
PANASONI
Quantity:
40 000
Part Number:
LNA2904L/LN166
Manufacturer:
PANASONIC
Quantity:
1 000
Infrared Light Emitting Diodes
LNA2904L
GaAs Infrared Light Emitting Diode
For optical control systems
*
f = 100 Hz, Duty cycle = 0.1 %
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
Center radiant intensity
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
High-power output, high-efficiency : I
Emitted light spectrum suited for silicon photodetectors
Good radiant power output linearity with respect to input current
High center radiant intensity
Transparent epoxy resin package
Absolute Maximum Ratings (Ta = 25˚C)
Features
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Parameter
Symbol
Symbol
I
T
T
V
V
P
FP
I
C
I
I
opr
stg
R
F
D
e
P
R
F
t
*
e
= 10 mW/sr (min.)
– 40 to +100
–25 to +85
I
I
I
I
V
V
The angle in which radiant intencity is 50%
Ratings
F
F
F
F
R
R
= 50mA
= 50mA
= 50mA
= 100mA
160
100
1.5
= 3V
= 0V, f = 1MHz
3
Conditions
Unit
mW
mA
˚C
˚C
A
V
min
10
1.35
950
typ
50
50
20
ø5.0 0.2
2
1
2.54
2-1.0 0.15
2-0.6 0.15
max
1.6
10
Unit : mm
1: Cathode
2: Anode
mW/sr
Unit
deg.
nm
nm
pF
V
A
1

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LNA2904L Summary of contents

Page 1

... Infrared Light Emitting Diodes LNA2904L GaAs Infrared Light Emitting Diode For optical control systems Features High-power output, high-efficiency : I Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current High center radiant intensity Transparent epoxy resin package Absolute Maximum Ratings (Ta = 25˚ ...

Page 2

LN2904L I — 120 100 – 100 Ambient temperature Ta (˚ — ( ...

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