SFH 421-Z OSRAM Opto Semiconductors Inc, SFH 421-Z Datasheet - Page 3
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SFH 421-Z
Manufacturer Part Number
SFH 421-Z
Description
EMITTER IR 880NM TOPLED SMD
Manufacturer
OSRAM Opto Semiconductors Inc
Datasheet
1.SFH_421-Z.pdf
(9 pages)
Specifications of SFH 421-Z
Wavelength
880nm
Package / Case
2-LCC (J-Lead)
Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
4mW/sr @ 100mA
Voltage - Forward (vf) Typ
1.5V
Viewing Angle
120°
Orientation
Top View
Mounting Type
Surface Mount
Radiant Intensity
48 mW/sr
Maximum Forward Current
100 mA
Maximum Power Dissipation
180 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Lens Shape
Circular
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q65110A1218
Kennwerte (
Characteristics
Bezeichnung
Parameter
Wellenlänge der Strahlung
Wavelength at peak emission
I
Spektrale Bandbreite bei 50% von
Spectral bandwidth at 50% of
I
Abstrahlwinkel
Half angle
Aktive Chipfläche
Active chip area
Abmessungen der aktiven Chipfläche
Dimensions of the active chip area
Schaltzeiten, I
auf 10%, bei
Switching times, Ι
90% to 10%,
Kapazität
Capacitance
V
Durchlassspannung
Forward voltage
I
I
Sperrstrom
Reverse current
V
Gesamtstrahlungsfluss
Total radiant flux
I
Temperaturkoeffizient von I
I
Temperature coefficient of I
Temperaturkoeffizient von
Temperature coefficient of
Temperaturkoeffizient von λ,
Temperature coefficient of λ,
2007-05-23
F
F
F
F
F
F
R
R
= 100 mA,
= 100 m A
= 100 mA,
= 1 A,
= 100 mA,
= 100 mA
= 0 V,
= 5 V
t
p
f
= 1 MHz
= 100 µs
T
I
t
t
t
I
p
F
p
p
F
A
e
= 20 ms
= 100 mA,
= 20 ms
= 20 ms
von 10% auf 90% und von 90%
= 100 mA,
= 25 °C)
e
from 10% to 90% and from
R
V
R
V
e
e
L
L
F
F
bzw. Φ
or Φ
,
,
I
= 50 Ω
= 50 Ω
I
I
F
I
I
max
F
F
F
= 100 mA
= 100 mA
= 100 mA
= 100 mA
e
,
I
I
max
e
F
,
= 100 mA
Symbol
Symbol
λ
∆λ
ϕ
A
L
L
t
C
V
V
I
Φ
TC
TC
TC
r
R
3
peak
,
F
F
o
e
×
×
t
I
V
λ
f
B
W
Wert
Value
880
80
± 60
0.09
0.3 × 0.3
0.5
15
1.5 (≤ 1.8)
3.0 (≤ 3.8)
0.01 (≤ 1)
23
– 0.5
– 2
+ 0.25
SFH 421, SFH 426
Einheit
Unit
nm
nm
Grad
deg.
mm
mm²
µs
pF
V
V
µA
mW
%/K
mV/K
nm/K
2