LNA2903L Panasonic - SSG, LNA2903L Datasheet
LNA2903L
Manufacturer Part Number
LNA2903L
Description
IR LED 950NM 25 DEG T1-3/4
Manufacturer
Panasonic - SSG
Datasheet
1.LNA2903L.pdf
(3 pages)
Specifications of LNA2903L
Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
9mW/sr @ 20mA
Wavelength
950nm
Voltage - Forward (vf) Typ
1.5V
Viewing Angle
40°
Orientation
Top View
Mounting Type
Through Hole
Package / Case
T 1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
LN66A
LN66A
LN66A
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
LNA2903L
Manufacturer:
PANASONI
Quantity:
40 000
Infrared Light Emitting Diodes
LNA2903L
GaAs Infrared Light Emitting Diode
For optical control systems
*
f = 100 Hz, Duty cycle = 0.1 %
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
Radiant intensity at center
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
High-power output, high-efficiency : I
Emitted light spectrum suited for silicon photodetectors
Good radiant power output linearity with respect to input current
Wide directivity : = 20 deg. (typ.)
Transparent epoxy resin package
Absolute Maximum Ratings (Ta = 25˚C)
Features
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Parameter
Symbol
Symbol
I
T
T
V
V
P
FP
I
C
I
I
opr
stg
R
F
D
e
P
R
F
t
*
e
= 9 mW/sr (min.)
– 40 to+100
–25 to +85
I
I
I
I
V
V
The angle in which radiant intencity is 50%
Ratings
F
F
F
F
R
R
= 50mA
= 50mA
= 50mA
= 100mA
160
100
1.5
= 3V
= 0V, f = 1MHz
3
Conditions
Unit
mW
mA
˚C
˚C
A
V
min
9
950
typ
1.4
50
35
25
ø5.0 0.2
2
1
2.54
2-1.0 0.15
2-0.6 0.15
max
1.6
10
Unit : mm
mW/sr
1: Cathode
2: Anode
Unit
deg.
nm
nm
pF
V
A
1
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LNA2903L Summary of contents
Page 1
... Infrared Light Emitting Diodes LNA2903L GaAs Infrared Light Emitting Diode For optical control systems Features High-power output, high-efficiency : I Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current Wide directivity : = 20 deg. (typ.) Transparent epoxy resin package Absolute Maximum Ratings (Ta = 25˚ ...
Page 2
... LNA2903L I — 120 100 – 100 Ambient temperature Ta (˚ — ( 100Hz ( 25˚ (1) 10 (2) 1 –1 10 – Pulse forward current I (mA) FP — 1000 I = 50mA F 980 960 940 920 900 – 120 Ambient temperature Ta (˚ — Duty cycle 25˚ –1 10 –2 10 –3 10 –2 – ...
Page 3
Infrared Light Emitting Diodes Frequency characteristics 25˚C 1 –1 10 –2 10 – Frequency f (kHz) 4 LN2903L 3 ...