SE5470-004 Honeywell Sensing and Control, SE5470-004 Datasheet - Page 4
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SE5470-004
Manufacturer Part Number
SE5470-004
Description
DIODE IR EMITTING ALGAAS TO-46
Manufacturer
Honeywell Sensing and Control
Specifications of SE5470-004
Viewing Angle
20°
Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
3.5mW/sr @ 100mA
Wavelength
880nm
Voltage - Forward (vf) Typ
1.9V
Orientation
Top View
Mounting Type
Through Hole
Package / Case
TO-46-2, Metal Can
Peak Wavelength
880nm
Forward Current If(av)
100mA
Rise Time
700ns
Fall Time Tf
700ns
Supply Voltage Range
1.9V
Operating Temperature Range
-55°C To +125°C
Lead Free Status / RoHS Status
Request inventory verification / Request inventory verification
Other names
480-1984
Fig. 7
Fig. 9
All Performance Curves Show Typical Values
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
SE3470/5470
AlGaAs Infrared Emitting Diode
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.8
0.6
0.4
0.2
0.0
Spectral Bandwidth
Coupling Characteristics
SE5470 with SD5443
760
0
1
800
Lens-to-lens distance - inches
2
Wavelength - nm
840
3
4
880
5
920
6
960
7
8
gra_011.ds4
gra_024.ds4
1000
9
Fig. 8
5.0
4.0
3.0
2.0
1.0
0.5
0.4
0.3
0.2
0.1
Radiant Intensity vs
Case Temperature
-75
-50
-25
Case temperature - °C
0
Normalized to
I
25
F
T
A
= 100 mA
= 25 °C
50
75
100
gra_022.ds4
125
35