TSTS7500 Vishay, TSTS7500 Datasheet

EMITTER IR 950NM GAAS TO-18

TSTS7500

Manufacturer Part Number
TSTS7500
Description
EMITTER IR 950NM GAAS TO-18
Manufacturer
Vishay
Datasheets

Specifications of TSTS7500

Radiant Intensity
1.6 mW/sr
Viewing Angle
60°
Current - Dc Forward (if)
250mA
Radiant Intensity (ie) Min @ If
1.25mW/sr @ 100mA
Wavelength
950nm
Voltage - Forward (vf) Typ
1.3V
Orientation
Top View
Mounting Type
Through Hole
Package / Case
TO-18-2
Maximum Forward Current
250 mA
Maximum Power Dissipation
500 mW
Maximum Operating Temperature
+ 100 C
Lens Shape
Circular
Peak Wavelength
950nm
Forward Current If(av)
100mA
Rise Time
800ns
Supply Voltage Range
1.3V
Diode Case Style
TO-18
No. Of Pins
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
751-1235

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TSTS7500
Manufacturer:
德律风根
Quantity:
20 000
Infrared Emitting Diode, 950 nm, GaAs
Description
The TSTS750. series are infrared emitting diodes in
standard GaAs technology in a hermetically sealed
TO-18 package. Their flat glass windows make them
ideal for use with external optics.
Features
Absolute Maximum Ratings
T
Electrical Characteristics
T
Document Number 81049
Rev. 1.7, 22-Feb-07
• Suitable for pulse operation
• Wide angle of half intensity ϕ = ± 30°
• Peak wavelength λ
• High reliability
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Storage temperature range
Thermal resistance junction/
ambient
Thermal resistance junction/
case
Forward voltage
Breakdown voltage
Junction capacitance
amb
amb
and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
p
= 950 nm
T
t
T
t
T
I
I
V
p
p
F
R
case
case
case
R
/T = 0.5, t
≤ 100 µs
= 100 mA, t
= 100 µA
= 0 V, f = 1 MHz, E = 0
≤ 25 °C
≤ 25 °C
≤ 25 °C
Test condition
Test condition
p
≤ 100 µs,
p
≤ 20 ms
e4
Applications
Symbol
• Radiation source in near infrared range
V
V
(BR)
C
F
j
Symbol
R
R
I
T
I
FSM
V
P
P
FM
T
thJA
thJC
I
stg
F
R
V
V
j
Min
5
- 55 to + 100
Vishay Semiconductors
Value
Typ.
250
500
170
500
100
450
150
2.5
1.3
30
5
TSTS7500
Max
1.7
94 8400
www.vishay.com
K/W
K/W
Unit
mW
mW
mA
mA
°C
°C
V
A
Unit
pF
V
V
1

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TSTS7500 Summary of contents

Page 1

... Radiation source in near infrared range Test condition Symbol ≤ 100 µ FSM stg R thJA R thJC Test condition Symbol ≤ (BR TSTS7500 Vishay Semiconductors 94 8400 Value Unit 5 V 250 mA 500 mA 2.5 A 170 mW 500 mW 100 ° 100 °C 450 K/W 150 K/W Min Typ. Max 1.3 1 www.vishay.com Unit V ...

Page 2

... TKφ e ϕ λ p Δλ ≤ 10 µ 0.01 ≤ 10 µ 0.01 ∅ Test condition Part = 20 ms TSTS7500 p 300 250 200 150 100 125 100 94 8018 Figure 2. Forward Current vs. Ambient Temperature Min Typ. Max 7 - 0.8 ± 30 950 50 400 400 0.5 Symbol Min Typ ...

Page 3

... Figure 5. Relative Forward Voltage vs. Ambient Temperature Document Number 81049 Rev. 1.7, 22-Feb-07 100 7926 Figure 6. Radiant Intensity vs. Forward Current 1000 100 7977 Figure 7. Radiant Power vs. Forward Current 80 100 94 7993 Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature TSTS7500 Vishay Semiconductors Forward Current (mA 0.1 ...

Page 4

... TSTS7500 Vishay Semiconductors 1.25 1.0 0.75 0.5 0. 100 900 950 λ - Wavelength (nm) 94 7994 Figure 9. Relative Radiant Power vs. Wavelength Package Dimensions in mm www.vishay.com 4 1.0 0.9 0.8 0.7 0.6 1000 94 7978 Figure 10. Relative Radiant Intensity vs. Angular Displacement 0° 10° 20° 30° 40° ...

Page 5

... Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81049 Rev. 1.7, 22-Feb-07 and may do so without further notice. TSTS7500 Vishay Semiconductors www.vishay.com 5 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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