LNA2902L Panasonic - SSG, LNA2902L Datasheet
LNA2902L
Manufacturer Part Number
LNA2902L
Description
IR LED 950NM 20 DEG T1-3/4
Manufacturer
Panasonic - SSG
Datasheet
1.LNA2902L.pdf
(4 pages)
Specifications of LNA2902L
Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
12mW/sr @ 50mA
Wavelength
950nm
Voltage - Forward (vf) Typ
1.4V
Viewing Angle
40°
Orientation
Top View
Mounting Type
Through Hole
Package / Case
T 1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
LNA2902L
Manufacturer:
PANASONI
Quantity:
40 000
Company:
Part Number:
LNA2902L/LN66A/LN66L
Manufacturer:
OSRAM
Quantity:
200 000
Infrared Light Emitting Diodes
LNA2902L
GaAs infrared light emitting diode
For optical control systems
I Features
I Absolute Maximum Ratings T
Note) * : Less than f = 100 Hz, duty cycle = 0.1%
I Electro-Optical Characteristics T
Note) * 1: Less than f = 100 Hz, duty cycle = 0.1%
Publication date: October 2001
• High-power output, high-efficiency: I
• Emitted light spectrum is suited for silicon photodetectors
• Good radiant power output linearity with respect to input current
• Wide directivity: θ = 20° (typ.)
• Transparent epoxy resin package
• Long lead-wire type
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
Radiant intensity
Total power output
Peak emission wavelength
Spectral band width
Forward voltage
Pulse forward voltage
Reverse current
Total capacitance between terminals
Beal angle at 50% axial intensity
Cut-off frequency
* 2: Cut-off frequency
Parameter
Parameter
* 2
*
* 1
f
C
: 10 × log
Symbol
(LN66A(L))
T
T
I
V
P
I
FP
opr
stg
F
D
R
Symbol
P
O
V
∆λ
V
P
P
λ
C
I
f
e
a
I
θ
at f = 50 kHz
R
C
e
FP
O
O
P
F
t
= 9 mW/sr (min.)
= 25°C
at f = f
−40 to +100
a
−25 to +85
= 25°C ± 3°C
Rating
160
100
1.5
3
C
I
I
I
I
I
I
V
V
The angle when the beam intensity is
halved.
F
F
F
F
F
FP
Note) The part number in the parenthesis shows conventional part number.
R
R
= 50 mA
= 50 mA
= 50 mA
= 50 mA
= 100 mA
SHC00039AED
= 1.0 A
= 3 V
= 0 V, f = 1 MHz
= −3
Unit
mW
mA
°C
°C
A
V
Conditions
Min
φ5.0±0.2
9.0
1
2
2.54
2-0.8 max.
2-0.5±0.15
12.0
Typ
950
1.4
50
35
20
1
0.5±0.15
Max
1.6
3.0
10
φ6.0±0.2
1: Anode
2: Cathode
Unit: mm
mW/sr
MHz
Unit
mW
nm
nm
µA
pF
V
V
°
1
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LNA2902L Summary of contents
Page 1
... Infrared Light Emitting Diodes LNA2902L (LN66A(L)) GaAs infrared light emitting diode For optical control systems I Features • High-power output, high-efficiency: I • Emitted light spectrum is suited for silicon photodetectors • Good radiant power output linearity with respect to input current • Wide directivity: θ = 20° (typ.) • ...
Page 2
... LNA2902L 120 100 − 100 Ambient temperature T (°C) a ∆P µs ( 100 Hz ( 25° ( (2) −1 10 − Pulse forward current I (mA) FP λ 000 = 980 960 940 920 900 − 120 Ambient temperature T (° Duty Cycle −1 10 −2 10 −3 10 −2 − ...
Page 3
... Frequency characteristics 10 = 25° −1 10 −2 10 − Frequency f (kHz) SHC00039AED LNA2902L 3 ...
Page 4
Caution for Safety DANGER Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any ...