PDI-E804 Advanced Photonix Inc, PDI-E804 Datasheet
PDI-E804
Manufacturer Part Number
PDI-E804
Description
EMITTER IR 880NM 80DEG TO-46
Manufacturer
Advanced Photonix Inc
Datasheet
1.PDI-E804.pdf
(1 pages)
Specifications of PDI-E804
Current - Dc Forward (if)
100mA
Wavelength
880nm
Voltage - Forward (vf) Typ
1.5V
Orientation
Top View
Mounting Type
Through Hole
Package / Case
TO-46
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Viewing Angle
-
Radiant Intensity (ie) Min @ If
-
Other names
PT-PDI-E804
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PDI-E804
Manufacturer:
Advanced Photonix Inc
Quantity:
135
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice. © 2007 Advanced Photonix, Inc. All rights reserved.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 •
ELECTRO-OPTICAL CHARACTERISTICS RATING
* 1/16 inch from case for 3 seconds max.
ABSOLUTE MAXIMUM RATING
FEATURES
• High output power
• High reliability
• Wide emission angle
SYMBOL PARAMETER
SYMBOL
T
Δ
V
T
T
P
V
V
l
C
t
t
Advanced Photonix, Inc.
P
I
I
r
f
STG
f
p
l
O
S
r
o
f
r
p
t
d
Power Dissipation
Continuous Forward Current
Peak Forward Current
Reverse Voltage
Storage Temperature
Operating Temperature
Soldering Temperature*
CHARACTERISTIC
Output Power
Forward Voltage
Reverse Breakdown Voltage
Peak Wavelength
Spectral Bandwidth @ 50% (FWHM)
Terminal Capacitance
Rise Time
Fall Time
DESCRIPTION
The PDI-E804 is an 880 nm high power GaAlAs
infrared emitter packaged in a TO-46 metal
header with a clear epoxy glob top.
(TA)= 23°C UNLESS OTHERWISE NOTED
MIN
-40
-40
0.145 [3.68]
TEST CONDITIONS
I
I
I
I
I
V
I
I
f
f
f
f
f
f
f
r
= 100 mA
= 100 mA
= 10 μA
= 20 mA
= 20 mA
= 20 mA
= 20 mA
MAX
+100
+100
+240
= 0V, f = 1MHz
160
100
3.0
5
Ø0.213 [5.41]
Ø0.209 [5.32]
L C
0.013 [0.33] SQ
CATHODE
BOTTOM SIDE ANODE
Ø0.005 [Ø0.13]
0.040
[1.02]
UNITS
mA
mW
°C
°C
°C
A
V
45°
(TA)= 23°C UNLESS OTHERWISE NOTED
CHIP DIMENSIONS INCH [mm]
GaAlAs High Power IR LED Emitters
L.E.D.
PACKAGE DIMENSIONS INCH [mm]
L C
CLEAR EPOXY
Ø0.168 [4.27]
HEADER
100
80
60
40
20
0
-100
MIN
18
865
5
-80
• Photoelectric switches
• Infrared sources
• Optical readers
APPLICATIONS
RADIATION PATTERN
-60
TO-46 PACKAGE
www.advancedphotonix.com
-40
TYP
1.00 [25.4] MIN
0.100 [2.54] MAX
1.5
880
17
0.75
0.40
20
30
65
0.043 [1.09]
0.040 [1.02]
Ø0.019 [0.48]
Ø0.016 [0.41]
Beam Angle (deg)
ANODE AND CASE
-20
CATHODE
0
0.100 [2.54]
895
MAX
20
1.9
PDI-E804
40
C L
L C
REV 5/24/07
UNITS
60
mW
nm
nm
pF
uS
uS
V
V
80
100
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