SE5450-013 Honeywell Sensing and Control, SE5450-013 Datasheet - Page 3

DIODE IR EMITTING GAAS TO-46

SE5450-013

Manufacturer Part Number
SE5450-013
Description
DIODE IR EMITTING GAAS TO-46
Manufacturer
Honeywell Sensing and Control
Datasheet

Specifications of SE5450-013

Viewing Angle
90°
Current - Dc Forward (if)
100mA
Radiant Intensity (ie) Min @ If
1.8mW/sr @ 100mA
Wavelength
935nm
Voltage - Forward (vf) Typ
1.7V
Orientation
Top View
Mounting Type
Through Hole
Package / Case
TO-46-2, Metal Can
Peak Wavelength
935nm
Forward Current If(av)
100mA
Rise Time
700ns
Fall Time Tf
700ns
Supply Voltage Range
1.7V
Operating Temperature Range
-55°C To +125°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
480-2982
Fig. 1
Fig. 3
Fig. 5
SE3450/5450
GaAs Infrared Emitting Diode
26
1.60
1.55
1.50
1.45
1.40
1.35
1.30
1.25
1.20
250
200
150
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
50
Radiant Intensity vs
Angular Displacement (SE3450)
Radiant Intensity vs
Forward Current
Forward Voltage vs
Temperature
-60
-50
0
-45
Angular displacement - degrees
-25
Pulsed
I
100
F
= 100 mA
-30
Forward current - mA
0
Temperature - °C
-15
200
25
0
50
300
+15 +30 +45 +60
75
400
100
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500
125
Fig. 2
Fig. 4
Fig. 6
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Radiant Intensity vs
Angular Displacement (SE5450)
Forward Voltage vs
Forward Current
Spectral Bandwidth
870
-40
0
10 20
-30
890
Angular displacement - degrees
-20
Forward current - mA
910
30
Wavelength - nm
-10
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
40
930
50
0
950
60
+10 +20 +30 +40
970
70
80 90 100
990 1010
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