SE2470-002 Honeywell Sensing and Control, SE2470-002 Datasheet

DIODE IR EMITTING ALGAAS PILL PK

SE2470-002

Manufacturer Part Number
SE2470-002
Description
DIODE IR EMITTING ALGAAS PILL PK
Manufacturer
Honeywell Sensing and Control
Datasheets

Specifications of SE2470-002

Viewing Angle
18°
Current - Dc Forward (if)
75mA
Radiant Intensity (ie) Min @ If
9mW/sr @ 50mA
Wavelength
880nm
Voltage - Forward (vf) Typ
1.8V
Orientation
Top View
Mounting Type
Surface Mount
Package / Case
Mini-pill
Peak Wavelength
880nm
Forward Current If(av)
75mA
Rise Time
700ns
Fall Time Tf
700ns
Supply Voltage Range
1.8V
Operating Temperature Range
-55°C To +125°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
480-1980
FEATURES
DESCRIPTION
The SE2470 is a high intensity aluminum gallium
arsenide infrared emitting diode mounted in a
hermetically sealed, glass lensed, metal can package.
This package directly mounts in double sided PC
boards. These devices typically exhibit 70% greater
power intensity than gallium arsenide devices at the
same forward current.
SE2470
AlGaAs Infrared Emitting Diode
Miniature, hermetically sealed, pill style, metal
can package
18¡ (nominal) beam angle
Wide operating temperature range
(- 55¡C to +125¡C)
Higher power output than GaAs at equivalent
drive currents
Ideal for direct mounting to printed circuit boards
880 nm wavelength
Mechanically and spectrally matched to SD2420
photodiode, SD2440 phototransistor and
SD2410 photodarlington
20
DIM_002.ds4
INFRA--1.TIF
Tolerance
OUTLINE DIMENSIONS in inches (mm)
3 plc decimals
2 plc decimals
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
±0.005(0.12)
±0.020(0.51)

Related parts for SE2470-002

SE2470-002 Summary of contents

Page 1

... Mechanically and spectrally matched to SD2420 photodiode, SD2440 phototransistor and SD2410 photodarlington DESCRIPTION The SE2470 is a high intensity aluminum gallium arsenide infrared emitting diode mounted in a hermetically sealed, glass lensed, metal can package. This package directly mounts in double sided PC boards. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current ...

Page 2

... SE2470 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (10 sec) Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 1.19 mW/¡ ...

Page 3

... SE2470 AlGaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -30 -20 -10 0 +10 +20 +30 +40 Angular displacement - degrees Fig. 3 Forward Voltage vs Forward Current 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 ...

Page 4

... SE2470 AlGaAs Infrared Emitting Diode Fig. 7 Normalized Power Output vs Temperature 2.0 1.8 1.6 1 -50 -25 0 +25 +50 +75 +100 +125 T - Ambient temperature - (°C) A All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. ...

Related keywords