TSHF5210 Vishay, TSHF5210 Datasheet

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... High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero DESCRIPTION TSHF5210 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. PRODUCT SUMMARY COMPONENT I (mW/sr) e TSHF5210 180 Note Test conditions see table “Basic Characteristics“ ...

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... TSHF5210 Vishay Semiconductors 180 160 140 120 100 R = 230 K/W 80 thJA 100 T - Ambient Temperature (°C) 21211 amb Fig Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φ ...

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... T < 50 °C amb 0.05 0.1 0.2 0.5 10 100 16971 3 4 20082 1000 Fig Relative Radiant Intensity vs. Angular Displacement emittertechsupport@vishay.com TSHF5210 Vishay Semiconductors 1000 100 100 1000 I - Forward Current (mA) F Fig Radiant Power vs. Forward Current 1.25 1.0 0.75 0.5 0.25 ...

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... TSHF5210 Vishay Semiconductors PACKAGE DIMENSIONS in millimeters A 0.5 + 0.15 - 0.05 6.544-5258.02-4 Issue: 6; 19.05.09 95 10916 www.vishay.com For technical questions, contact: 4 High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero C 1.1 ± 0.25 2.54 nom. emittertechsupport@vishay.com R 2.49 (sphere) Area not plane Ø 5 ± 0.15 ...

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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...