MT9HVF12872PY-800E1 Micron Technology Inc, MT9HVF12872PY-800E1 Datasheet
MT9HVF12872PY-800E1
Specifications of MT9HVF12872PY-800E1
Related parts for MT9HVF12872PY-800E1
MT9HVF12872PY-800E1 Summary of contents
Page 1
... ECC, SR) 240-Pin DDR2 VLP RDIMM DDR2 SDRAM VLP RDIMM MT9HVF3272PY – 256MB MT9HVF6472PY – 512MB MT9HVF12872PY – 1GB Features • 240-pin, registered very low profile, dual in-line memory module, ATCA form factor • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • ...
Page 2
Table 2: Addressing Parameter Refresh count Row address Device bank address Device configuration Column address Module rank address Table 3: Part Numbers and Timing Parameters – 256MB 1 Base device: MT47H32M8, 256Mb DDR2 SDRAM Module 2 Part Number Density MT9HVF3272P(I)Y-667__ ...
Page 3
Pin Assignments Table 6: Pin Assignments 240-Pin VLP RDIMM Front Pin Symbol Pin Symbol Pin DQ19 61 REF DQ0 33 DQ24 63 4 DQ1 34 DQ25 ...
Page 4
... Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR2 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 7: Pin Descriptions Symbol Type Ax Input BAx Input ...
Page 5
Table 7: Pin Descriptions (Continued) Symbol Type SDA I/O RDQSx, Output RDQS#x Err_Out# Output (open drain Supply DD DDQ V Supply DDSPD V Supply REF V Supply SS – NC – NF – NU – RFU PDF: 09005aef81de9391 ...
Page 6
Functional Block Diagram Figure 2: Functional Block Diagram RS0# DQS0 DQS0# DM0/DQS9 NC/DQS9# DM/ NU/ CS# DQS DQS# RDQS RDQS# DQ0 DQ DQ1 DQ DQ2 DQ U1 DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ DQS1 DQS1# DM1/DQS10 ...
Page 7
... DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data trans- fers at the I/O pins. DDR2 modules use two sets of differential signals: DQS, DQS# to capture data and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals ...
Page 8
Electrical Specifications Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other condi- tions outside those indicated in each device's data ...
Page 9
... Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully de- signed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Mi- cron encourages designers to simulate the signal characteristics of the system's memo- ry bus to ensure adequate signal integrity of the entire memory system ...
Page 10
I Specifications DD Table 10: DDR2 I Specifications and Conditions – 256MB DD Values shown for MT47H32M8 DDR2 SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter Operating one bank ...
Page 11
Table 10: DDR2 I Specifications and Conditions – 256MB (Continued) DD Values shown for MT47H32M8 DDR2 SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter Operating bank interleave read current: ...
Page 12
Table 11: DDR2 I Specifications and Conditions – 512MB DD Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter Operating one bank active-precharge current: t ...
Page 13
Table 11: DDR2 I Specifications and Conditions – 512MB (Continued) DD Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter Operating bank interleave read current: ...
Page 14
Table 12: DDR2 I Specifications and Conditions (Die Revision A) – 1GB DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet Parameter Operating one ...
Page 15
Table 12: DDR2 I Specifications and Conditions (Die Revision A) – 1GB (Continued) DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet Parameter Operating ...
Page 16
Table 13: DDR2 I Specifications and Conditions (Die Revision E) – 1GB DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet Parameter Operating one ...
Page 17
Table 13: DDR2 I Specifications and Conditions (Die Revision E) – 1GB (Continued) DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet Parameter Operating ...
Page 18
Register and PLL Specifications Table 14: Register Specifications SSTU32866 devices or equivalent Parameter Symbol DC high-level V Control, command, IH(DC) input voltage DC low-level V Control, command, IL(DC) input voltage AC high-level V Control, command, IH(AC) input voltage AC low-level ...
Page 19
Table 15: PLL Specifications CU877 device or equivalent Parameter Symbol DC high-level V IH input voltage DC low-level V IL input voltage Input voltage (limits high-level V IH input voltage DC low-level V IL input voltage Input ...
Page 20
Serial Presence-Detect For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 17: SPD EEPROM Operating Conditions Parameter/Condition Supply voltage Input high voltage: logic 1; All inputs Input low voltage: logic 0; All inputs Output low voltage: I ...
Page 21
Module Dimensions Figure 3: 240-Pin DDR2 VLP RDIMM 2.0 (0.079) R (4X) U1 2.5 (0.098) D (2X) 2.3 (0.091) TYP Pin 1 2.2 (0.087) TYP 1.0 (0.039) 1.0 (0.039) TYP 70.68 (2.783) U8 Pin 240 3.04 (0.1197) TYP 55.0 (2.165) ...