MT18HTF12872AY-53ED4 Micron Technology Inc, MT18HTF12872AY-53ED4 Datasheet - Page 3

MODULE DDR2 1GB 240-DIMM

MT18HTF12872AY-53ED4

Manufacturer Part Number
MT18HTF12872AY-53ED4
Description
MODULE DDR2 1GB 240-DIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT18HTF12872AY-53ED4

Memory Type
DDR2 SDRAM
Memory Size
1GB
Speed
533MT/s
Package / Case
240-DIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
240UDIMM
Device Core Size
72b
Organization
128Mx72
Total Density
1GByte
Chip Density
512Mb
Access Time (max)
50ps
Maximum Clock Rate
533MHz
Operating Supply Voltage (typ)
1.8/2.5/3.3V
Operating Current
1.368A
Number Of Elements
18
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
240
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 6: Part Numbers and Timing Parameters – 4GB Modules
Base device: MT47H256M82,
PDF: 09005aef80e8ad4d
htf18c64_128_256_512x72ay – Rev. I 3/10 EN
Part Number
MT16HTF51272A(I)Y-667__
MT16HTF51272A(I)Y-53E__
MT16HTF51272A(I)Y-667__
MT16HTF51272A(I)Y-53E__
MT16HTF51272A(I)Y-40E__
Notes:
1. Contact factory for availability.
2. The data sheet for the base device can be found on Micron’s Web site.
3. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MT18HTF12872AY-667D4.
3
2
2Gb DDR2 SDRAM
512MB, 1GB, 2GB, 4GB (x72, DR) 240-Pin DDR2 SDRAM UDIMM
Module
Density
4GB
4GB
4GB
4GB
4GB
Configuration
512 Meg x 64
512 Meg x 64
512 Meg x 72
512 Meg x 72
512 Meg x 72
3
Bandwidth
Module
5.3 GB/s
4.3 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
Memory Clock/
3.75ns/533 MT/s
3.75ns/533 MT/s
3.0ns/667 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
Data Rate
© 2003 Micron Technology, Inc. All rights reserved.
(CL-
Clock Cycles
t
Features
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
RCD-
t
RP)

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