MT9HTF6472AY-40ED4 Micron Technology Inc, MT9HTF6472AY-40ED4 Datasheet - Page 19
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MT9HTF6472AY-40ED4
Manufacturer Part Number
MT9HTF6472AY-40ED4
Description
MODULE DDR2 512MB 240-DIMM
Manufacturer
Micron Technology Inc
Specifications of MT9HTF6472AY-40ED4
Memory Type
DDR2 SDRAM
Memory Size
512MB
Speed
400MT/s
Package / Case
240-DIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
240RDIMM
Device Core Size
72b
Organization
64Mx72
Total Density
512MByte
Chip Density
512Mb
Access Time (max)
60ps
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.035A
Number Of Elements
9
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 85C
Operating Temperature Classification
Commercial
Pin Count
240
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 14: DDR2 I
Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com-
ponent data sheet
PDF: 09005aef80e8ad4d
htf9c32_64_128x72ay – Rev. F 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
=
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
t
CK (I
OUT
DD
),
= 0mA; BL = 4, CL = CL (I
t
RC =
t
RC (I
DD
DD
Specifications and Conditions (Die Revision E) – 1GB (Continued)
),
t
RRD =
t
RRD (I
DD
), AL =
256MB, 512MB, 1GB (x72, SR, ECC) 240-Pin DDR2 UDIMM
DD
),
t
t
RCD (I
RCD =
DD
t
RCD (I
) - 1 ×
DD
19
t
CK (I
); CKE is
DD
);
t
CK
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
-80E/
3015
-800
2520
-667
© 2003 Micron Technology, Inc. All rights reserved.
I
DD
2430
-53E
Specifications
-40E
2340
Units
mA