MT4HTF3264AY-80ED3 Micron Technology Inc, MT4HTF3264AY-80ED3 Datasheet - Page 17

• Manufacturer Part Number: MT4HTF3264AY-80ED3
• Description: MODULE DDR2 256MB 240-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4HTF3264AY-80ED3

• Memory Type: DDR2 SDRAM
• Memory Size: 256MB
• Speed: 800MT/s
• Package / Case: 240-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 13: DDR2 I
Values shown for MT47H64M16 DDR2 SDRAM only and are computed from values specified in the 1Gb (32 Meg x 16) com-
ponent data sheet
PDF: 09005aef80ed6fda
htf4c16_32_64x64ay – Rev. H 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
=
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
t
CK (I
OUT
DD
),
= 0mA; BL = 4, CL = CL (I
t
RC =
t
RC (I
DD
DD
Specifications and Conditions (Die Revision E) – 512MB (Continued)
),
t
RRD =
128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM
t
RRD (I
DD
), AL =
DD
),
t
t
RCD (I
RCD =
DD
t
RCD (I
) - 1 ×
DD
17
t
CK (I
); CKE is
DD
);
t
CK
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
-80E/
-800
1760
1400
-667
© 2003 Micron Technology, Inc. All rights reserved.
I
DD
-53E
1320
Specifications
1200
-40E
Units
mA