MT36HTS51272FY-667A2E3 Micron Technology Inc, MT36HTS51272FY-667A2E3 Datasheet - Page 19
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MT36HTS51272FY-667A2E3
Manufacturer Part Number
MT36HTS51272FY-667A2E3
Description
MODULE DDR2 4GB 240FBDIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT36HTS51272FY-53EA2E3.pdf
(35 pages)
Specifications of MT36HTS51272FY-667A2E3
Memory Type
DDR2 SDRAM
Memory Size
4GB
Speed
667MT/s
Package / Case
240-FBDIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Electrical Specifications
Table 6:
Table 7:
PDF: 09005aef822148b0/source: 09005aef82214898
HTS36C512x72F_2.fm - Rev. A 4/06 EN
Parameter
Voltage on any pin relative to V
Voltage on V
Voltage on V
Voltage on V
Storage temperature
DDR2 SDRAM device operating temperature (ambient)
AMB device operating temperature (ambient)
Parameter
AMB supply voltage
DDR2 SDRAM supply voltage
Termination voltage
EEPROM supply voltage
SPD Input HIGH (logic 1) voltage
SPD Input LOW (logic 0) voltage
RESET Input HIGH (logic 1) voltage
RESET Input LOW (logic 0) voltage
Leakage Current (RESET)
Leakage Current (link)
CC
DD
TT
Absolute Maximum Ratings
Input DC Voltage and Operating Conditions
pin relative to V
pin relative to V
pin relative to Vss
Notes:
Notes:
1. T
2. See applicable DDR2 SDRAM component datasheet for
2. Applies to AMB CMOS signal RESET#.
3. For all other AMB related DC parameters, please refer to the high-speed differential link
Stresses greater than those listed in Table 6 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
adversely affect reliability.
1. Applies to SMB and SPD bus signals.
t
not have an IT option.
settings. The
sustain 95°C operation; however, the FBDIMM does not have an IT option.
interface specification.
SS
REFI = 3.9µs above 85°C);DDR2 SDRAM component datasheet, though the FBDIMM does
SS
SS
CASE
is specified at 95°C only when using 2X refresh timing (
t
REFI
IT
parameter is used to specify the doubled refresh interval necessary to
240-Pin 4GB DDR2 SDRAM FBDIMM (DR, FB, x72)
Symbol
V
V
V
V
V
DDSPD
V
IH
IH
V
IL
IL
V
I
I
DD
(
(
CC
TT
(
(
L
L
19
DC
DC
DC
DC
V
Symbol
)
)
IN
)
)
V
T
V
, V
V
T
CASE
DD
STG
CC
TT
0.48 × V
OUT
Min
1.46
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1.7
1.7
2.1
1.0
-90
-5
DD
0.50 × V
Min
–0.3
–0.3
–0.5
–0.5
–55
0
0
Nom
1.50
1.8
–
–
–
–
–
–
–
DD
t
REFI and extended mode register
Electrical Specifications
0.52 × V
Max
1.75
1.75
100
t
110
2.3
2.3
V
95
REFI = 7.8µs at or below 85°C;
Max
1.54
DDSPD
1.9
3.6
0.8
0.5
90
5
©2006 Micron Technology, Inc. All rights reserved.
DD
Units
°C
°C
°C
V
V
V
V
Units
µA
µA
V
V
V
V
V
V
V
V
Preliminary
Notes
1, 2
Notes
1
1
2
1
2
3
–
–
–
–