MT16HTS25664HY-667A1 Micron Technology Inc, MT16HTS25664HY-667A1 Datasheet - Page 10

• Manufacturer Part Number: MT16HTS25664HY-667A1
• Description: MODULE DDR2 2GB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16HTS25664HY-667A1

• Memory Type: DDR2 SDRAM
• Memory Size: 2GB
• Speed: 667MT/s
• Package / Case: 200-SODIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 200SODIMM
• Device Core Size: 64b
• Organization: 256Mx64
• Total Density: 2GByte
• Chip Density: 1Gb
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.176A
• Number Of Elements: 16
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

I
Table 9: DDR2 I
Values shown for MT47H256M8THJ DDR2 SDRAM only and are computed from values specified in the 2Gb TwinDie (256
Meg x 8) component data sheet
PDF: 09005aef821e5bf3
hts16c256_512x64h.pdf - Rev. E 3/10 EN
Parameter
Operating one bank active-precharge current:
t
commands; Address bus inputs are switching; Data bus inputs are switching
Operating one bank active-read-precharge current: I
4, CL = CL (I
(I
Address bus inputs are switching; Data pattern is same as I
Precharge power-down current: All device banks idle;
CKE is LOW; Other control and address bus inputs are stable; Data bus in-
puts are floating
Precharge quiet standby current: All device banks idle;
CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable;
Data bus inputs are floating
Precharge standby current: All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are switching; Da-
ta bus inputs are switching
Active power-down current: All device banks open;
=
puts are stable; Data bus inputs are floating
Active standby current: All device banks open;
t
mands; Other control and address bus inputs are switching; Data bus
inputs are switching
Operating burst write current: All device banks open; Continuous
burst writes; BL = 4, CL = CL (I
(I
Address bus inputs are switching; Data bus inputs are switching
Operating burst read current: All device banks open; Continuous burst
read, I
MAX (I
mands; Address bus inputs are switching; Data bus inputs are switching
Burst refresh current:
(I
trol and address bus inputs are switching; Data bus inputs are switching
Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and
address bus inputs are floating; Data bus inputs are floating
DD
RC (I
RAS MAX (I
DD
DD
DD
t
CK (I
),
),
) interval; CKE is HIGH, S# is HIGH between valid commands; Other con-
DD
Specifications
t
t
RCD =
RP =
OUT
DD
DD
),
),
t
); CKE is LOW; Other control and address bus in-
RAS =
= 0mA; BL = 4, CL = CL (I
t
t
DD
RP (I
RP =
DD
t
RCD (I
), AL = 0;
),
t
DD
t
t
RP =
RAS MIN (I
RP (I
DD
); CKE is HIGH, S# is HIGH between valid commands;
DD
Specifications and Conditions – 2GB
DD
); CKE is HIGH, S# is HIGH between valid commands;
t
RP (I
t
CK =
t
); CKE is HIGH, S# is HIGH between valid com-
CK =
DD
DD
t
); CKE is HIGH, S# is HIGH between valid com-
DD
CK (I
t
); CKE is HIGH, S# is HIGH between valid
CK (I
), AL = 0;
DD
DD
DD
),
), AL = 0;
); REFRESH command at every
t
RC =
t
CK =
t
RC (I
t
CK =
t
CK (I
2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
DD
t
CK =
t
CK =
),
t
t
DD
CK (I
CK =
t
RAS =
),
t
CK
t
CK (I
t
t
RAS =
DD
CK (I
t
OUT
CK =
t
DD4W
t
CK (I
CK =
),
10
Fast PDN exit
MR[12] = 0
Slow PDN exit
MR[12] = 1
t
DD
RAS MIN
t
= 0mA; BL =
DD
RAS =
),
t
DD
t
CK (I
RAS MAX
),
t
t
CK (I
); CKE is
RAS =
t
RC =
t
RFC
t
DD
RAS
DD
Micron Technology, Inc. reserves the right to change products or specifications without notice.
);
);
Symbol -800
I
I
I
I
I
I
I
DD4W
I
I
DD2Q
DD2N
DD3N
I
I
DD2P
DD3P
DD4R
DD0
DD1
DD5
DD6
1376
1376
1976
816
976
112
456
496
296
136
576
112
1176
1176
1816
-667
776
896
112
376
416
296
136
536
112
© 2006 Micron Technology, Inc. All rights reserved.
I
DD
1096
1096
1776
-53E
Specifications
656
856
112
376
416
296
136
456
112
-40E
1736
656
816
112
336
376
296
136
416
936
936
112
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA