MT16HTS25664HY-53EA1 Micron Technology Inc, MT16HTS25664HY-53EA1 Datasheet - Page 2

• Manufacturer Part Number: MT16HTS25664HY-53EA1
• Description: MODULE DDR2 2GB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16HTS25664HY-53EA1

• Memory Type: DDR2 SDRAM
• Memory Size: 2GB
• Speed: 533MT/s
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 1:
Table 2:
Table 3:
PDF: 09005aef821e5bf3/Source: 09005aef82198d54
HTS16C256x64H.fm - Rev. A 4/06 EN
Part Number
Refresh count
Row addressing
Device bank addressing
Device page size per bank
Device configuration
Column addressing
Module rank addressing
MT16HTS25664HY-667__
MT16HTS25664HY-53E__
MT16HTS25664HY-40E__
Speed Grade
-667
-53E
-40E
Address Table
Key Timing Parameters
Part Numbers and Timing Parameters
1
Notes:
CL = 3
400
400
400
1. All part numbers end with a two-place code (not shown), designating component and PCB
Module
Density
revisions. Consult factory for current revision codes. Example: MT16HTF12864HY-40EA1.
2GB
2GB
2GB
Data Rate (MT/s)
CL = 4
Configuration
533
533
400
256 Meg x 64
256 Meg x 64
256 Meg x 64
2GB: (x64, DR) 200-Pin DDR2 SDRAM SODIMM
2
CL = 5
667
–
–
Bandwidth
Module
5.3 GB/s
4.3 GB/s
3.2 GB/s
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
(ns)
RCD
15
15
15
Memory Clock/
3.75ns/533 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
Data Rate
1Gb (128 Meg x 8)
8 (BA0, BA1, BA2)
16K (A0–A13)
2 (S0#, S1#)
1K (A0–A9)
©2006 Micron Technology, Inc. All rights reserved.
(ns)
t
15
15
15
RP
2GB
1KB
8K
(CL -
Latency
t
5-5-5
4-4-4
3-3-3
Features
RCD -
(ns)
t
55
55
55
RC
t
RP)