MT36HTF25672FY-53EB3E3 Micron Technology Inc, MT36HTF25672FY-53EB3E3 Datasheet - Page 3

• Manufacturer Part Number: MT36HTF25672FY-53EB3E3
• Description: MODULE DDR2 2GB 240-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT36HTF25672FY-53EB3E3

• Memory Type: DDR2 SDRAM
• Memory Size: 2GB
• Speed: 533MT/s
• Package / Case: 240-DIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240FBDIMM
• Device Core Size: 72b
• Organization: 256Mx72
• Total Density: 2GByte
• Chip Density: 512Mb
• Package Type: FBDIMM
• Maximum Clock Rate: 533MHz
• Operating Supply Voltage (typ): 1.8V
• Number Of Elements: 36
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 95C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

General Description
Advanced Memory Buffer (AMB)
PDF: 09005aef829a1e4d/Source: 09005aef8297c0ad
HTF36C256_512x72F_RC_H.fm - Rev. B 9/09 EN
The Micron FBDIMM adheres to the currently proposed industry specifications for
FBDIMMs. The following specifications contain detailed information on FBDIMM
design, interfaces, and theory of operation and are listed here for the system designers’
convenience. Refer to the JEDEC Web site for available specifications.
• FBDIMM Design Specification – pending JEDEC approval
• FBDIMM: Architecture and Protocol – JESD206
• FBDIMM: Advanced Memory Buffer (AMB) – JESD82-20
• Design for Test, Design for Validation (DFx) Specification
• Serial Presence-Detect (SPD) for Fully Buffered DIMM –
The MT36HTF25672F and MT36HTF51272F DDR2 SDRAM modules are a high-band-
width, large-capacity channel solution that have a narrow host interface. FBDIMMs use
DDR2 SDRAM devices isolated from the channel behind an AMB buffer on the
FBDIMM. Memory-device capacity remains high and total memory capacity scales with
DDR2 SDRAM bit density.
As shown in Figure 2 on page 6, the FBDIMM channel provides a communication path
from a host controller to an array of DDR2 SDRAM devices, with the DDR2 SDRAM
devices buffered behind an AMB device. The physical isolation of the DDR2 SDRAM
devices from the channel enables the flexibility to enhance the communication path to
significantly increase reliability and availability of the memory subsystem.
The AMB isolates the DDR2 SDRAM devices from the channel. This single-chip AMB
component, located in the center of each FBDIMM, acts as a repeater and buffer for all
signals and commands exchanged between the host controller and DDR2 SDRAM
devices, including data input and output. The AMB communicates with the host
controller and adjacent FBDIMMs on a system board using an industry-standard, high-
speed, differential, point-to-point interface at 1.5V. The AMB also enables buffering of
memory traffic to support large memory capacities. Refer to the JEDEC JESD82-20 spec-
ification for further information.
JEDEC Standard No. 21-C page 4.1.2.7-1
2GB, 4GB (x72, DR) 240-Pin DDR2 SDRAM FBDIMM
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
General Description
©2007 Micron Technology, Inc. All rights reserved.