MT9HTF3272Y-667B3 Micron Technology Inc, MT9HTF3272Y-667B3 Datasheet - Page 10

• Manufacturer Part Number: MT9HTF3272Y-667B3
• Description: MODULE DDR2 256MB 240-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9HTF3272Y-667B3

• Memory Type: DDR2 SDRAM
• Memory Size: 256MB
• Speed: 667MT/s
• Package / Case: 240-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Table 8: Absolute Maximum Ratings
PDF: 09005aef82250868
htf9c32_64_128x72.pdf - Rev. F 3/10 EN
V
V
Symbol
DD
IN
I
VREF
T
, V
I
T
/V
OZ
I
C
A
I
1
DDQ
OUT
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
pins not under test = 0V)
Output leakage current; 0V ≤ V
DQs and ODT are disabled
V
DDR2 SDRAM device operating case
temperature
Module ambient operating temperature
DD
DD
REF
/V
; V
leakage current; V
DDQ
REF
Notes:
input 0V ≤ V
supply voltage relative to V
2
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device's data sheet is not implied. Exposure to
absolute maximum rating conditions for extended periods may adversely affect reliability.
256MB, 512MB, 1GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM
1. The refresh rate is required to double when T
2. For further information, refer to technical note TN-00-08: "Thermal Applications," avail-
able on Micron’s Web site.
IN
REF
≤ 0.95V; (All other
= Valid V
OUT
SS
≤ V
REF
SS
DDQ
level
IN
≤
;
Command/Address, RAS#,
CAS#, WE# S#, CKE, ODT, BA
CK, CK#
DM
DQ, DQS, DQS#
Commercial
Industrial
Commercial
Industrial
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
C
exceeds 85°C < T
Electrical Specifications
–250
Min
–0.5
–0.5
–36
–40
–40
–5
–5
–5
0
0
© 2003 Micron Technology, Inc. All rights reserved.
C
≤ 95°C.
Max
250
2.3
2.3
36
85
95
70
85
5
5
5
Units
µA
µA
µA
°C
°C
V
V