MT9HVF3272KY-667B1 Micron Technology Inc, MT9HVF3272KY-667B1 Datasheet - Page 10
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MT9HVF3272KY-667B1
Manufacturer Part Number
MT9HVF3272KY-667B1
Description
MODULE DDR2 256MB 244MDIMM VLP
Manufacturer
Micron Technology Inc
Specifications of MT9HVF3272KY-667B1
Memory Type
DDR2 SDRAM
Memory Size
256MB
Speed
667MT/s
Package / Case
244-MDIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
244VLP MiniRDIMM
Device Core Size
72b
Organization
32Mx72
Total Density
256MByte
Chip Density
256Mb
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.71A
Number Of Elements
9
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 55C
Operating Temperature Classification
Commercial
Pin Count
244
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 10:
PDF: 09005aef81c9620b/Source: 09005aef81c961ec
HVF9C64_128x72K.fm - Rev. C 3/07 EN
Parameter/Condition
Operating one bank active-precharge current:
t
valid commands; Address bus inputs are switching; Data bus inputs are
switching
Operating one bank active-read-precharge current: I
BL = 4, CL = CL (I
t
between valid commands; Address bus inputs are switching; Data pattern
is same as I
Precharge power-down current: All device banks idle;
CKE is LOW; Other control and address bus inputs are stable; Data bus
inputs are floating
Precharge quiet standby current: All device banks idle;
t
inputs are stable; Data bus inputs are floating
Precharge standby current: All device banks idle;
is HIGH, S# is HIGH; Other control and address bus inputs are switching;
Data bus inputs are switching
Active power-down current: All device banks open;
t
inputs are stable; Data bus inputs are floating
Active standby current: All device banks open;
t
valid commands; Other control and address bus inputs are switching;
Data bus inputs are switching
Operating burst write current: All device banks open; Continuous
burst writes; BL = 4, CL = CL (I
t
valid commands; Address bus inputs are switching; Data bus inputs are
switching
Operating burst read current: All device banks open; Continuous burst
reads; I
t
valid commands; Address bus inputs are switching; Data bus inputs are
switching
Burst refresh current:
t
Other control and address bus inputs are switching; Data bus inputs are
switching
Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and
address bus inputs are floating; Data bus inputs are floating
Operating bank interleave read current: All device banks
interleaving reads; I
AL =
t
valid commands; Address bus inputs are stable during deselects; Data bus
inputs are switching
RC =
RAS =
CK =
CK =
RAS =
RAS =
RAS =
RFC (I
RRD =
t
t
t
RCD (I
t
DD
RC (I
CK (I
CK (I
t
t
t
t
OUT
t
RAS MIN (I
RAS MAX (I
RAS MAX (I
RAS MAX (I
RRD (I
) interval; CKE is HIGH, S# is HIGH between valid commands;
DD
DD
DD
DD
= 0mA; BL = 4, CL = CL (I
DD
),
4W
); CKE is LOW; Other control and address bus
); CKE is HIGH, S# is HIGH; Other control and address bus
I
Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the
1Gb (128 Meg x 8) component data sheet
DD
) - 1 ×
DD
t
RAS =
DD
),
Specifications and Conditions – 1GB
DD
t
), AL = 0;
RCD =
DD
DD
DD
OUT
t
),
CK (I
),
),
),
t
t
RAS MIN (I
RCD =
t
t
t
= 0mA; BL = 4, CL = CL (I
RP =
RP =
RP =
t
CK =
t
DD
RCD (I
t
);
CK =
t
t
t
DD
RP (I
RP (I
RP (I
t
t
t
RCD (I
CK (I
CK =
), AL = 0;
DD
DD
t
DD
DD
DD
CK (I
); CKE is HIGH, S# is HIGH between
DD
DD
); CKE is HIGH, S# is HIGH between
t
DD
); CKE is HIGH, S# is HIGH between
); CKE is HIGH, S# is HIGH between
); CKE is HIGH, S# is HIGH between
CK (I
), AL = 0;
); REFRESH command at every
); CKE is HIGH, S# is HIGH
DD
512MB, 1GB: (x72, ECC, SR) 244-Pin DDR2 VLP Mini-RDIMM
t
DD
),
CK =
t
),
RC =
t
RC =
t
t
CK (I
CK =
DD
t
t
RC (I
CK =
),
t
t
CK =
t
RC (I
DD
CK =
t
CK (I
DD
),
t
CK (I
DD
t
),
t
OUT
CK (I
CK =
t
DD
CK (I
Fast PDN exit
MR[12] = 0
Slow PDN exit
MR[12] = 1
),
10
DD
),
= 0mA;
DD
t
DD
),
CK (I
),
); CKE
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
);
Symbol
I
I
I
I
I
I
I
DD
DD
DD
DD
I
I
DD
DD
DD
I
I
I
DD
DD
DD
DD
DD
4W
2Q
2N
3N
2P
3P
4R
0
1
5
6
7
-80E-
1,440
1,440
2,115
3,015
800
810
990
450
450
360
540
63
90
63
1,215
1,215
1,935
2,520
-667
765
900
360
360
270
495
63
90
63
©2005 Micron Technology, Inc. All rights reserved.
I
DD
1,125
1,125
1,890
2,430
-53E
630
855
360
360
270
405
63
90
63
Specifications
1,845
2,340
-40E
630
810
315
315
270
360
945
945
63
90
63
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA