MT9HVF3272KY-667B1 Micron Technology Inc, MT9HVF3272KY-667B1 Datasheet - Page 10

• Manufacturer Part Number: MT9HVF3272KY-667B1
• Description: MODULE DDR2 256MB 244MDIMM VLP
• Manufacturer: Micron Technology Inc

Specifications of MT9HVF3272KY-667B1

• Memory Type: DDR2 SDRAM
• Memory Size: 256MB
• Speed: 667MT/s
• Package / Case: 244-MDIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 244VLP MiniRDIMM
• Device Core Size: 72b
• Organization: 32Mx72
• Total Density: 256MByte
• Chip Density: 256Mb
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.71A
• Number Of Elements: 9
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 55C
• Operating Temperature Classification: Commercial
• Pin Count: 244
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 10:
PDF: 09005aef81c9620b/Source: 09005aef81c961ec
HVF9C64_128x72K.fm - Rev. C 3/07 EN
Parameter/Condition
Operating one bank active-precharge current:
t
valid commands; Address bus inputs are switching; Data bus inputs are
switching
Operating one bank active-read-precharge current: I
BL = 4, CL = CL (I
t
between valid commands; Address bus inputs are switching; Data pattern
is same as I
Precharge power-down current: All device banks idle;
CKE is LOW; Other control and address bus inputs are stable; Data bus
inputs are floating
Precharge quiet standby current: All device banks idle;
t
inputs are stable; Data bus inputs are floating
Precharge standby current: All device banks idle;
is HIGH, S# is HIGH; Other control and address bus inputs are switching;
Data bus inputs are switching
Active power-down current: All device banks open;
t
inputs are stable; Data bus inputs are floating
Active standby current: All device banks open;
t
valid commands; Other control and address bus inputs are switching;
Data bus inputs are switching
Operating burst write current: All device banks open; Continuous
burst writes; BL = 4, CL = CL (I
t
valid commands; Address bus inputs are switching; Data bus inputs are
switching
Operating burst read current: All device banks open; Continuous burst
reads; I
t
valid commands; Address bus inputs are switching; Data bus inputs are
switching
Burst refresh current:
t
Other control and address bus inputs are switching; Data bus inputs are
switching
Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and
address bus inputs are floating; Data bus inputs are floating
Operating bank interleave read current: All device banks
interleaving reads; I
AL =
t
valid commands; Address bus inputs are stable during deselects; Data bus
inputs are switching
RC =
RAS =
CK =
CK =
RAS =
RAS =
RAS =
RFC (I
RRD =
t
t
t
RCD (I
t
DD
RC (I
CK (I
CK (I
t
t
t
t
OUT
t
RAS MIN (I
RAS MAX (I
RAS MAX (I
RAS MAX (I
RRD (I
) interval; CKE is HIGH, S# is HIGH between valid commands;
DD
DD
DD
DD
= 0mA; BL = 4, CL = CL (I
DD
),
4W
); CKE is LOW; Other control and address bus
); CKE is HIGH, S# is HIGH; Other control and address bus
I
Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the
1Gb (128 Meg x 8) component data sheet
DD
) - 1 ×
DD
t
RAS =
DD
),
Specifications and Conditions – 1GB
DD
t
), AL = 0;
RCD =
DD
DD
DD
OUT
t
),
CK (I
),
),
),
t
t
RAS MIN (I
RCD =
t
t
t
= 0mA; BL = 4, CL = CL (I
RP =
RP =
RP =
t
CK =
t
DD
RCD (I
t
);
CK =
t
t
t
DD
RP (I
RP (I
RP (I
t
t
t
RCD (I
CK (I
CK =
), AL = 0;
DD
DD
t
DD
DD
DD
CK (I
); CKE is HIGH, S# is HIGH between
DD
DD
); CKE is HIGH, S# is HIGH between
t
DD
); CKE is HIGH, S# is HIGH between
); CKE is HIGH, S# is HIGH between
); CKE is HIGH, S# is HIGH between
CK (I
), AL = 0;
); REFRESH command at every
); CKE is HIGH, S# is HIGH
DD
512MB, 1GB: (x72, ECC, SR) 244-Pin DDR2 VLP Mini-RDIMM
t
DD
),
CK =
t
),
RC =
t
RC =
t
t
CK (I
CK =
DD
t
t
RC (I
CK =
),
t
t
CK =
t
RC (I
DD
CK =
t
CK (I
DD
),
t
CK (I
DD
t
),
t
OUT
CK (I
CK =
t
DD
CK (I
Fast PDN exit
MR[12] = 0
Slow PDN exit
MR[12] = 1
),
10
DD
),
= 0mA;
DD
t
DD
),
CK (I
),
); CKE
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
);
Symbol
I
I
I
I
I
I
I
DD
DD
DD
DD
I
I
DD
DD
DD
I
I
I
DD
DD
DD
DD
DD
4W
2Q
2N
3N
2P
3P
4R
0
1
5
6
7
-80E-
1,440
1,440
2,115
3,015
800
810
990
450
450
360
540
63
90
63
1,215
1,215
1,935
2,520
-667
765
900
360
360
270
495
63
90
63
©2005 Micron Technology, Inc. All rights reserved.
I
DD
1,125
1,125
1,890
2,430
-53E
630
855
360
360
270
405
63
90
63
Specifications
1,845
2,340
-40E
630
810
315
315
270
360
945
945
63
90
63
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA