MT18VDVF12872DG-40BF1 Micron Technology Inc, MT18VDVF12872DG-40BF1 Datasheet - Page 36

• Manufacturer Part Number: MT18VDVF12872DG-40BF1
• Description: MODULE DDR 1GB 184-DIMM VLP
• Manufacturer: Micron Technology Inc

Specifications of MT18VDVF12872DG-40BF1

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 400MT/s
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184VLPRDIMM
• Device Core Size: 72b
• Organization: 128Mx72
• Total Density: 1GByte
• Chip Density: 512Mb
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 2.6V
• Operating Current: 1.8A
• Number Of Elements: 18
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.5V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 21:
PDF: 09005aef81c73825/Source: 09005aef81c73837
DVF18C64_128x72D_2.fm - Rev. A 8/05 EN
Byte
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
0
1
2
3
4
5
6
7
8
9
Number of SPD Bytes used by Micron
Total Number of Bytes in SPD Device
Fundamental Memory Type
Number of Row Addresses on Assembly
Number of Column Addresses on Assembly
Number of Physical Ranks on DIMM
Module Data Width
Module Data Width (Continued)
Module Voltage Interface Levels
SDRAM Cycle Time,
note 1)
SDRAM Access from Clock,
(CAS Latency = 2.5)
Module Configuration Type
Refresh Rate/Type
SDRAM Device Width (Primary SDRAM)
Error-checking SDRAM Data Width
Minimum Clock Delay, Back-to-Back Random
Column Access
Burst Lengths Supported
Number of Banks on SDRAM Device
CAS Latencies Supported
CS Latency
WE Latency
SDRAM Module Attributes
SDRAM Device Attributes: General
SDRAM Cycle Time,
SDRAM Access from CK,
(CAS Latency = 2)
SDRAM Cycle Time,
SDRAM Access from CK,
Minimum Row Precharge Time,
Minimum Row Active to Row Active, (RRD
Minimum RAS# to CAS# Delay,
Minimum RAS# Pulse Width,
Module Rank Density
Address and Command Setup Time,
3)
Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes appear on page 37
Description
t
t
t
CK (CAS Latency = 2.5) (See
CK (CAS Latency = 2)
CK, (CAS Latency = 1.5)
t
t
AC
AC, (CAS Latency = 1.5)
t
AC
t
RAS (See note 2)
t
RCD
t
RP
t
IS (See note
512MB, 1GB: (x72, DR) 184-Pin DDR VLP RDIMM
0.75ns (-262/-26A/-265)
0.75ns (-262/-26A/-265)
7.5ns (-335/-262/-26A)
15ns (-262/-26A/-265)
45ns (-262/-26A/-265)
36
Fast/Concurrent AP
1ns (262/-26A/-265)
Reg./Diff. Clk/PLL
Entry (Version)
20ns (-26A/-265)
20ns (-26A/-265)
256MB, 512MB
7ns (-262/-26A)
SDRAM DDR
0.70ns (-335)
0.80ns (-335)
7.5ns (-265)
0.7ns (-335)
7.81µs/SELF
10ns (-265)
18ns (-335)
15ns (-262)
12ns (-335)
18ns (-335)
15ns (-262)
42ns (-335)
SSTL 2.5V
6ns (-335)
10 or 11
1 clock
2, 4, 8
2, 2.5
ECC
N/A
N/A
128
256
72
13
2
0
8
8
4
0
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT18VDVF6472D MT18VDVF12872D
©2003, 2004, 2005 Micron Technology, Inc. All rights reserved.
0D
0A
A0
2A
2D
A0
0C
C0
3C
3C
3C
80
08
07
02
48
00
04
60
70
75
70
75
02
82
08
08
01
0E
04
01
02
26
75
70
75
00
00
48
50
30
48
50
40
80
Serial Presence-Detect
0D
A0
2A
2D
A0
80
08
07
0B
02
48
00
04
60
70
75
70
75
02
82
08
08
01
0E
04
0C
01
02
26
C0
75
70
75
00
00
48
3C
50
30
3C
48
3C
50
80
80