MT18VDVF12872DG-40BF1 Micron Technology Inc, MT18VDVF12872DG-40BF1 Datasheet - Page 4

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MT18VDVF12872DG-40BF1

Manufacturer Part Number
MT18VDVF12872DG-40BF1
Description
MODULE DDR 1GB 184-DIMM VLP
Manufacturer
Micron Technology Inc

Specifications of MT18VDVF12872DG-40BF1

Memory Type
DDR SDRAM
Memory Size
1GB
Speed
400MT/s
Package / Case
184-DIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
184VLPRDIMM
Device Core Size
72b
Organization
128Mx72
Total Density
1GByte
Chip Density
512Mb
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
2.6V
Operating Current
1.8A
Number Of Elements
18
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.5V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
184
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 5:
PDF: 09005aef81c73825/Source: 09005aef81c73837
DVF18C_128x72D.fm - Rev. B 10/07 EN
WE#, CAS#, RAS#
DQS0–DQS8
CKE0, CKE1
DQ0–DQ63
CK0, CK0#,
DM0–DM8
V
BA0, BA1
SA0–SA2
CB0–CB7
Symbol
S0#, S1#
A0–A12
RESET#
DD
V
Pin Descriptions
SDA
DDSPD
V
SCL
V
NC
/V
REF
SS
DD
Q
Supply
Supply
Supply
Supply
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Type
I/O
I/O
I/O
I/O
Address inputs: Provide the row address for ACTIVE commands, and the
column address and auto precharge bit (A10) for READ/WRITE commands, to
select one location out of the memory array in the respective device bank. A10
sampled during a PRECHARGE command determines whether the PRECHARGE
applies to one device bank (A10 LOW, device bank selected by BA0, BA1) or all
device banks (A10 HIGH). The address inputs also provide the op-code during a
MODE REGISTER SET command. BA0 and BA1 define which mode register
(mode register or extended mode register) is loaded during the LOAD MODE
REGISTER command.
Bank address: BA0 and BA1 define to which device bank an ACTIVE, READ,
WRITE, or PRECHARGE command is being applied.
Clock: CK and CK# are differential clock inputs. All address and control input
signals are sampled on the crossing of the positive edge of CK and the
negative edge of CK#. Output data (DQ and DQS) is referenced to the
crossings of CK and CK#.
Clock enable: CKE (registered HIGH) activates and CKE (registered LOW)
deactivates the internal clock, input buffers, and output drivers.
Input data mask: DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH, along with that input data, during a write
access. DM is sampled on both edges of DQS. Although DM pins are input-only,
the DM loading is designed to match that of DQ and DQS pins.
Reset: Asynchronously forces all registered outputs LOW when RESET# is LOW.
This signal can be used during power-up to ensure that CKE is LOW and DQ are
High-Z.
Chip selects: S# enables (registered LOW) and S# disables (registered HIGH)
the command decoder. All commands are masked when S# is registered HIGH.
S# is considered part of the command code.
Presence-detect address inputs: These pins are used to configure the
presence-detect device.
Serial clock for presence-detect: SCL is used to synchronize the presence-
detect data transfer to and from the module.
Command inputs: RAS#, CAS#, and WE# (along with S#) define the command
being entered.
Check bits.
Data input/output: Data bus.
Data strobe: Output with read data, input with write data. DQS is edge-
aligned with read data, center-aligned with write data. Used to capture data.
Serial presence-detect data: SDA is a bidirectional pin used to transfer
addresses and data into and out of the presence-detect portion of the module.
Power supply: +2.5V ±0.2V (-40B: +2.6V ±0.1V).
Serial EEPROM positive power supply: +2.3V to +3.6V.
SSTL_2 reference voltage (V
Ground.
No connect: These pins are not connected on the module.
4
1GB (x72, ECC, DR) 184-Pin DDR VLP RDIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
/2).
Pin Assignments and Descriptions
Description
©2005 Micron Technology, Inc. All rights reserved.

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