MT9VDVF6472G-335F1 Micron Technology Inc, MT9VDVF6472G-335F1 Datasheet - Page 2
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MT9VDVF6472G-335F1
Manufacturer Part Number
MT9VDVF6472G-335F1
Description
MODULE DDR 512MB 184-DIMM VLP
Manufacturer
Micron Technology Inc
Datasheet
1.MT9VDVF6472G-40BD4.pdf
(12 pages)
Specifications of MT9VDVF6472G-335F1
Memory Type
DDR SDRAM
Memory Size
512MB
Speed
333MT/s
Package / Case
184-DIMM
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 2:
Table 3:
PDF: 09005aef81c737fb/Source: 09005aef81c7379d
DVF9C64x72.fm - Rev. B 10/07 EN
Parameter
Part Number
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
MT9VDVF6472G-40B__
MT9VDVF6472Y-40B__
MT9VDVF6472G-335__
MT9VDVF6472Y-335__
Addressing
Part Numbers and Timing Parameters – 512MB Modules
Base device: MT46V64M8,
2
Notes:
1. Data sheets for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
PCB revisions. Consult factory for current revision codes. Example: MT9VDVF6472Y-335F1.
Module
Density
512MB
512MB
512MB
512MB
1
512Mb DDR SDRAM
Configuration
64 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
512MB (x72, ECC, SR) 184-Pin DDR VLP RDIMM
2
Bandwidth
Module
3.2 GB/s
3.2 GB/s
2.7 GB/s
2.7 GB/s
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb (64 Meg x 8)
2K (A0–A9, A11)
Memory Clock/
5.0ns/400 MT/s
5.0ns/400 MT/s
6.0ns/333 MT/s
6.0ns/333 MT/s
8K (A0–A12)
4 (BA0, BA1)
Data Rate
512MB
1 (S0#)
8K
©2005 Micron Technology, Inc. All rights reserved.
(CL-
Clock Cycles
t
3-3-3
3-3-3
3-3-3
3-3-3
RCD-
Features
t
RP)