MT9VDDT6472PHG-335D2 Micron Technology Inc, MT9VDDT6472PHG-335D2 Datasheet - Page 18

• Manufacturer Part Number: MT9VDDT6472PHG-335D2
• Description: MODULE SDRAM DDR 512MB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9VDDT6472PHG-335D2

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 333MT/s
• Package / Case: 200-SODIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 200SODIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 512Mb
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.4A
• Number Of Elements: 9
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 17: Electrical Characteristics and Recommended AC Operating Conditions
DDR SDRAM components only; notes appear on pages 19–22
pdf: 09005aef808ffe58, source: 09005aef808ffdc7
DD9C16_32_64_128x72PHG.fm - Rev. B 9/04 EN
PARAMETER
DQ-DQS hold, DQS to first DQ to go non-
valid, per access
Data Hold Skew Factor
ACTIVE to PRECHARGE command
ACTIVE to READ with Auto precharge
command
ACTIVE to ACTIVE/AUTO REFRESH
command period
AUTO REFRESH command
period
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b
command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window (DVW)
REFRESH to REFRESH
command interval
Average periodic refresh
interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ
command
Exit SELF REFRESH to READ command
AC CHARACTERISTICS
(Continued)
128MB,
256MB,
512MB
1GB
128MB
256MB,
512MB, 1GB
128MB
256MB,
512MB, 1GB
DD
128MB, 256MB, 512MB, 1GB (x72, ECC, PLL, SR)
SYMBOL
t
t
t
WPRES
t
t
t
t
t
WPRE
t
t
WPST
t
t
t
t
t
t
XSNR
XSRD
t
RPRE
RPST
t
REFC
t
WTR
QHS
RAS
RAP
t
RCD
RRD
REFI
VTD
RFC
t
WR
QH
na
RC
RP
t
t
MIN
0.25
QHS
120
200
HP -
t
0.9
0.4
0.4
42
15
60
72
15
15
12
15
75
QH -
0
1
0
-335
18
t
DQSQ
70,000
MAX
140.6
0.50
70.3
15.6
1.1
0.6
0.6
7.8
200-PIN DDR SDRAM SODIMM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
MIN
t
0.25
HP -
QHS
120
200
t
0.9
0.4
0.4
40
15
60
75
15
15
15
15
75
QH -
0
1
0
-262
t
DQSQ
120,000
MAX
140.6
0.75
70.3
15.6
1.1
0.6
0.6
7.8
t
MIN
t
0.25
QHS
120
200
t
0.9
0.4
0.4
HP-
40
20
65
75
20
20
15
15
75
QH -
-26A/-265
0
1
0
0
©2004 Micron Technology, Inc. All rights reserved.
t
DQSQ
120,000
MAX
140.6
0.75
70.3
15.6
1.1
0.6
0.6
7.8
UNITS NOTES
ADVANCE
t
t
t
t
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
CK
ns
CK
ns
CK
ns
CK
ns
µs
µs
µs
µs
ns
ns
CK
22, 23
31, 48
18, 19
43
43
38
38
17
22
21
21
21