MT9HTF3272Y-53EB2 Micron Technology Inc, MT9HTF3272Y-53EB2 Datasheet - Page 14

MODULE DDR2 256MB 240DIMM

MT9HTF3272Y-53EB2

Manufacturer Part Number
MT9HTF3272Y-53EB2
Description
MODULE DDR2 256MB 240DIMM
Manufacturer
Micron Technology Inc

Specifications of MT9HTF3272Y-53EB2

Memory Type
DDR2 SDRAM
Memory Size
256MB
Speed
533MT/s
Package / Case
240-DIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
240RDIMM
Device Core Size
72b
Organization
32Mx72
Total Density
256MByte
Chip Density
256Mb
Access Time (max)
500ps
Maximum Clock Rate
533MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.44A
Number Of Elements
9
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 55C
Operating Temperature Classification
Commercial
Pin Count
244
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 11: DDR2 I
Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8)
component data sheet
PDF: 09005aef82250868
htf9c32_64_128x72.pdf - Rev. F 3/10 EN
Parameter
Operating one bank active-precharge current:
t
commands; Address bus inputs are switching; Data bus inputs are switching
Operating one bank active-read-precharge current: I
4, CL = CL (I
(I
Address bus inputs are switching; Data pattern is same as I
Precharge power-down current: All device banks idle;
CKE is LOW; Other control and address bus inputs are stable; Data bus
inputs are floating
Precharge quiet standby current: All device banks idle;
CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable;
Data bus inputs are floating
Precharge standby current: All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are switching; Da-
ta bus inputs are switching
Active power-down current: All device banks open;
=
puts are stable; Data bus inputs are floating
Active standby current: All device banks open;
t
mands; Other control and address bus inputs are switching; Data bus
inputs are switching
Operating burst write current: All device banks open; Continuous
burst writes; BL = 4, CL = CL (I
(I
Address bus inputs are switching; Data bus inputs are switching
Operating burst read current: All device banks open; Continuous burst
read, I
MAX (I
mands; Address bus inputs are switching; Data bus inputs are switching
Burst refresh current:
(I
trol and address bus inputs are switching; Data bus inputs are switching
Self refresh current: CK and CK# at 0V; CKE ≤ 0.2V; Other control and
address bus inputs are floating; Data bus inputs are floating
RC (I
RAS MAX (I
DD
DD
DD
t
CK (I
),
),
) interval; CKE is HIGH, S# is HIGH between valid commands; Other con-
DD
t
t
RCD =
RP =
OUT
DD
DD
),
),
t
); CKE is LOW; Other control and address bus in-
RAS =
= 0mA; BL = 4, CL = CL (I
t
t
DD
RP (I
RP =
DD
t
RCD (I
), AL = 0;
),
t
DD
t
RP =
t
RAS MIN (I
RP (I
); CKE is HIGH, S# is HIGH between valid commands;
DD
DD
t
DD
); CKE is HIGH, S# is HIGH between valid commands;
RP (I
Specifications and Conditions – 512MB
t
CK =
t
); CKE is HIGH, S# is HIGH between valid com-
CK =
DD
DD
); CKE is HIGH, S# is HIGH between valid com-
t
DD
CK (I
t
); CKE is HIGH, S# is HIGH between valid
256MB, 512MB, 1GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM
CK (I
), AL = 0;
DD
DD
DD
),
), AL = 0;
); REFRESH command at every
t
RC =
t
CK =
t
RC (I
t
CK =
t
CK (I
DD
t
CK =
t
CK =
),
t
t
DD
CK (I
CK =
t
RAS =
),
t
CK
t
CK (I
t
t
RAS =
DD
CK (I
t
OUT
CK =
t
DD4W
t
CK (I
CK =
),
14
Fast PDN exit
MR[12] = 0
Slow PDN ex-
it MR[12] = 1
t
DD
RAS MIN
t
= 0mA; BL =
DD
RAS =
),
t
DD
t
CK (I
RAS MAX
),
t
t
CK (I
); CKE is
RAS =
t
RC =
t
RFC
t
DD
RAS
DD
Micron Technology, Inc. reserves the right to change products or specifications without notice.
);
);
Symbol
I
I
I
I
I
I
I
DD4W
I
I
DD2Q
DD2N
DD3N
I
I
DD2P
DD3P
DD4R
DD0
DD1
DD5
DD6
-80E/
1035
1755
1845
2070
800
900
450
495
360
108
630
63
63
1530
1620
1620
-667
© 2003 Micron Technology, Inc. All rights reserved.
810
945
405
450
315
108
585
63
63
I
DD
-53E
1260
1305
1530
Specifications
720
855
360
405
270
108
495
63
63
1035
1035
1485
-40E
720
810
315
360
225
108
405
63
63
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA

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