MT8HTF3264HY-667B3 Micron Technology Inc, MT8HTF3264HY-667B3 Datasheet
MT8HTF3264HY-667B3
Specifications of MT8HTF3264HY-667B3
Related parts for MT8HTF3264HY-667B3
MT8HTF3264HY-667B3 Summary of contents
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DDR2 SDRAM SODIMM MT8HTF3264H(I) – 256MB MT8HTF6464H(I) – 512MB MT8HTF12864H(I) – 1GB For component data sheets, refer to Micron’s Web site: Features • 200-pin, small outline, dual in-line memory module (SODIMM) • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or ...
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... Part Numbers and Timing Parameters – 256MB Modules Base device: MT47H32M8, 256Mb DDR2 SDRAM Module 1 Part Number Density 256MB MT8HTF3264HY-667__ MT8HTF3264HY-53E__ 256MB MT8HTF3264HY-40E__ 256MB Table 4: Part Numbers and Timing Parameters – 512MB Modules Base device: MT47H64M8, 512Mb DDR2 SDRAM Module 1 Part Number Density MT8HTF6464HY-80E__ ...
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Module Pin Assignments and Descriptions Table 6: Pin Assignments 200-Pin SODIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQS2 101 REF 103 DQ0 55 DQ18 105 A10/AP 155 ...
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Table 7: Pin Descriptions Symbol Type Description A[15:0] Input Address inputs: Provide the row address for ACTIVE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in ...
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Figure 2: Functional Block Diagram S0# DQS0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1# DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2# DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3# ...
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... DQS is edge-aligned with data for reads and center-aligned with data for writes. DDR2 SDRAM modules operate from a differential clock (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. ...
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Electrical Specifications Stresses greater than those listed in Table 8 may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the ...
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... Design Considerations Simulations Micron memory modules are designed to optimize signal integrity through carefully designed terminations, controlled board impedances, routing topologies, trace length matching, and decoupling. However, good signal integrity starts at the system level. Micron encourages designers to simulate the signal characteristics of the system’s memory bus to ensure adequate signal integrity of the entire memory system ...
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Table 10: DDR2 I Specifications and Conditions – 256MB DD Values are for the MT47H32M8 DDR2 SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge current; ...
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Table 11: DDR2 I Specifications and Conditions – 512MB DD Values are for the MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge current; ...
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Table 12: DDR2 I Specifications and Conditions – 1GB (die revision A) DD Values are for the MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) component data sheet Parameter/Condition Operating one ...
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Table 13: DDR2 I Specifications and Conditions – 1GB (die revision E) DD Values are for the MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) component data sheet Parameter/Condition Operating one ...
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Serial Presence-Detect Table 14: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...
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Module Dimensions Figure 3: 200-pin DDR2 SODIMM Module Dimensions 2.0 (0.079) R (2X) U1 1.8 (0.071) D (2X) 6.0 (0.236) TYP 1.0 (0.039) TYP 2.0 (0.079) TYP U6 PIN 200 Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or ...