MT8HTF3264HDY-667B3 Micron Technology Inc, MT8HTF3264HDY-667B3 Datasheet - Page 12
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MT8HTF3264HDY-667B3
Manufacturer Part Number
MT8HTF3264HDY-667B3
Description
MODULE DDR2 256MB 200SODIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT8HTF6464HDY-53EB3.pdf
(19 pages)
Specifications of MT8HTF3264HDY-667B3
Memory Type
DDR2 SDRAM
Memory Size
256MB
Speed
667MT/s
Package / Case
200-SODIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 10: DDR2 I
Values shown for MT47H16M16 DDR2 SDRAM only and are computed from values specified in the 256Mb (16 Meg x 16)
component data sheet
PDF: 09005aef80ebed66
htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
(I
HIGH between valid commands; Address bus inputs are stable during deselects;
Data bus inputs are switching
DD
),
t
RC =
OUT
= 0mA; BL = 4, CL = CL (I
t
RC (I
DD
),
DD
t
RRD =
Notes:
Specifications and Conditions – 256MB (Continued)
t
RRD (I
1. Value calculated as one module rank in this operating condition; all other module ranks
2. Value calculated reflects all module ranks in this operating condition.
in I
DD
DD
DD2P
),
), AL =
t
RCD =
(CKE LOW) mode.
256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
t
RCD (I
t
RCD (I
DD
DD
) - 1 ×
); CKE is HIGH, S# is
12
t
CK (I
DD
);
t
CK =
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
CK
Symbol
I
DD7
1
-667
1020
© 2006 Micron Technology, Inc. All rights reserved.
I
DD
-53E
980
Specifications
-40E
940
Units
mA