MT8HTF12864HY-53EA3 Micron Technology Inc, MT8HTF12864HY-53EA3 Datasheet - Page 10

• Manufacturer Part Number: MT8HTF12864HY-53EA3
• Description: MODULE SDRAM DDR2 1GB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT8HTF12864HY-53EA3

• Memory Type: DDR2 SDRAM
• Memory Size: 1GB
• Speed: 533MT/s
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 11:
PDF: 09005aef80eec96e/Source: 09005aef80eec946
HTF8C32_64_128x64HG.fm - Rev. E 6/08 EN
Parameter/Condition
Operating one bank active-precharge current;
t
commands; Address bus inputs are switching; Data bus inputs are switching
Operating one bank active-read-precharge current; I
CL = CL (I
t
bus inputs are switching; Data pattern is same as I
Precharge power-down current; All device banks idle;
is LOW; Other control and address bus inputs are stable; Data bus inputs are
floating
Precharge quiet standby current; All device banks idle;
CKE is HIGH, S# is HIGH; Other control and address bus inputs are stable; Data
bus inputs are floating
Precharge standby current; All device banks idle;
HIGH, S# is HIGH; Other control and address bus inputs are switching; Data
bus inputs are switching
Active power-down current; All device banks open;
t
inputs are stable; Data bus inputs are floating
Active standby current; All device banks open;
t
commands; Other control and address bus inputs are switching; Data bus
inputs are switching
Operating burst write current; All device banks open, continuous burst
writes; BL = 4, CL = CL (I
t
bus inputs are switching; Data bus inputs are switching
Operating burst read current; All device banks open, continuous burst
reads, I
t
commands; Address bus inputs are switching; Data bus inputs are switching
Burst refresh current;
t
control and address bus inputs are switching; Data bus inputs are switching
Self refresh current; CK and CK# at 0V; CKE ≤ 0.2V; Other control and
address bus inputs are floating; Data bus inputs are floating
Operating bank interleave read current; All device banks interleaving
reads, I
t
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching; See I
RC =
RCD =
CK =
RAS =
RP =
RAS =
RFC (I
CK =
t
t
t
t
RP (I
DD
RC (I
CK (I
CK (I
t
t
t
OUT
OUT
RAS MAX (I
RAS MAX (I
RCD (I
) interval; CKE is HIGH, S# is HIGH between valid commands; Other
DD
DD
DD
DD
= 0mA; BL = 4, CL = CL (I
= 0mA; BL = 4, CL = CL (I
DD
), AL = 0;
); CKE is HIGH, S# is HIGH between valid commands; Address
),
DDR2 I
Values are for the MT47H64M8 DDR2 SDRAM only and are computed from values specified in the
512Mb (64 Meg x 8) component data sheet
); CKE is LOW; Other control and address bus
),
DD
t
t
RAS =
RC =
); CKE is HIGH, S# is HIGH between valid commands; Address
DD
DD
t
t
),
),
CK =
DD
RC (I
t
RAS MIN (I
t
t
DD
RP =
RP =
t
CK =
Specifications and Conditions – 512MB
), AL = 0;
DD
t
CK (I
t
t
),
RP (I
RP (I
t
CK (I
t
RRD =
DD
DD
DD
DD
),
DD
DD
DD
t
); CKE is HIGH, S# is HIGH between valid
CK =
256MB, 512MB, 1GB: (x64, SR) 200-Pin DDR2 SDRAM SODIMM
t
); CKE is HIGH, S# is HIGH between valid
); CKE is HIGH, S# is HIGH between valid
RC =
), AL = 0;
); Refresh the command at every
), AL =
t
RRD (I
t
CK (I
t
RC (I
t
DD
RCD (I
DD
t
),
DD
CK =
),
t
t
DD
RCD =
),
CK =
t
t
DD
RAS =
CK =
t
t
4W
DD
RAS =
CK =
t
CK (I
) - 1 ×
7 conditions for detail
t
CK (I
t
t
t
RCD (I
OUT
CK =
CK (I
t
t
DD
t
CK (I
RAS MAX (I
t
CK =
10
RAS MIN (I
t
DD
),
CK (I
= 0mA; BL = 4,
DD
t
Fast PDN Exit
MR[12] = 0
Slow PDN Exit
MR[12] = 1
DD
),
CK (I
DD
t
),
CK (I
); CKE is
DD
); CKE is
DD
);
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
DD
DD
); CKE
);
),
),
Symbol
I
I
I
I
I
I
I
DD
DD
DD
DD
I
I
DD
DD
DD
I
I
I
DD
DD
DD
DD
DD
4W
2Q
2N
3N
2P
3P
4R
0
1
5
6
7
-80E/
1560
1640
1840
2400
-800
Electrical Specifications
800
920
400
440
320
560
56
96
56
©2004 Micron Technology, Inc. All rights reserved.
-667
1360 1120
1440 1160
1440 1360 1320
1920 1800 1760
720
840
360
400
280
520
56
96
56
-53E
640
760
320
360
240
440
56
96
56
-40E Units
640
720
280
320
200
360
920
920
56
96
56
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA