MT5LSDT472AG-13EG6 Micron Technology Inc, MT5LSDT472AG-13EG6 Datasheet - Page 12

• Manufacturer Part Number: MT5LSDT472AG-13EG6
• Description: MODULE SDRAM 32MB 168DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT5LSDT472AG-13EG6

• Memory Type: SDRAM
• Memory Size: 32MB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 1, 5, 6; notes appear following the parameter tables; V
Table 11: I
Notes: 1, 5, 6, 11, 13; notes appear following the parameter tables; V
32, 64, 128MB x 64 SDRAM DIMM
SD5C4_8_16x72AG.fm - Rev. C 6/04 EN
PARAMETER/CONDITION
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT: Any input 0V
test = 0V)
OUTPUT LEAKAGE CURRENT: DQs are disabled;
0V
OUTPUT LEVELS: Output High Voltage (I
4mA)
Output Low Voltage (I
OPERATING CURRENT: Active Mode; Burst = 2; READ or
WRITE;
STANDBY CURRENT: Power-Down Mode; All device banks
idle; CKE = LOW
STANDBY CURRENT: Active Mode; CKE = HIGH; CS# = HIGH;
All device banks active after
progress
OPERATING CURRENT: Burst Mode; Continuous burst; READ
or WRITE; All device banks active
AUTO REFRESH CURRENT
CS# = HIGH; CKE = HIGH
SELF REFRESH CURRENT: CKE
V
Stresses greater than those listed may cause perma-
Voltage on V
Voltage on Inputs, NC or I/O Pins
DD
V
Relative to V
Relative to V
(All other pins not under
OUT
t
RC =
V
t
DD
RC (MIN)
DD
Q
DD
SS
SS
, V
Specifications and Conditions – 32MB
DD
. . . . . . . . . . . . . . . . . . . . -1V to +4.6V
. . . . . . . . . . . . . . . . . . . . -1V to +4.6V
OUT
Q Supply
= 4mA)
t
RCD met; No accesses in
0.2V
OUT
t
t
RFC =
RFC = 15.62µs
V
IN
= -
t
Command/
Address, CKE
CK, S0#
CK2, S2#
DQMB
DQ
RFC (MIN)
12
DD
SYMBOL
, V
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
V
SYMBOL
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
DD
Operating Temperature
Storage Temperature (plastic) . . . . . . -55°C to +150°C
DD
DD
32MB, 64MB, 128MB (x72, SR)
Q = +3.3V ±0.3V
V
V
1
2
3
4
5
6
7
V
I
,
V
T
T
OZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
OH
I
OL
V
IH
IL
I
, V
OPR
OPR
DD
DD
Q
(Commercial - ambient) . . . . . . 0°C to +65°C
(Industrial - ambient) . . . . . . . -40°C to +85°C
Q = +3.3V ±0.3V; DRAM components only
1,150
-13E
625
225
750
10
15
5
168-PIN SDRAM UDIMM
MIN
-0.3
-25
-15
-10
2.4
-5
-5
3
2
–
1,050
MAX
-133
575
225
700
10
15
5
V
DD
MAX
3.6
0.8
0.4
25
15
10
5
5
–
-10E
475
175
600
950
+ 0.3
10
15
©2004 Micron Technology, Inc. All rights reserved.
5
UNITS
UNITS
µA
µA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
19, 29, 30
3, 18, 19,
3, 12, 19,
3, 18, 19,
3, 12, 18,
NOTES
NOTES
22
22
33
33
29
29
29
29
4