MT4VDDT864AG-26AB1 Micron Technology Inc, MT4VDDT864AG-26AB1 Datasheet - Page 26
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT4VDDT864AG-26AB1
Manufacturer Part Number
MT4VDDT864AG-26AB1
Description
MODULE SDRAM DDR 64MB 184DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT4VDDT864AG-265B1.pdf
(28 pages)
Specifications of MT4VDDT864AG-26AB1
Memory Type
DDR SDRAM
Memory Size
64MB
Speed
266MT/s
Package / Case
184-DIMM
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 21: Serial Presence- Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes appear on page 27
pdf: 09005aef8085081a, source: 09005aef806e129d
DD4C8_16_32x64AG.fm - Rev. B 9/04 EN
BYTE
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
0
1
2
3
4
5
6
7
8
9
Number of SPD Bytes Used by Micron
Total Number of Bytes in SPD Device
Fundamental Memory Type
Number of Row Addresses on Assembly
Number of Column Addresses on
Assembly
Number of Physical Ranks on DIMM
Module Data Width
Module Data Width (Continued)
Module Voltage Interface Levels
SDRAM Cycle Time,
= 2.5) (See note 1)
SDRAM Access From Clock,
Latency = 2.5) (See note 1)
Module Configuration Type
Refresh Rate/Type
DDR SDRAM Device Width
Error-checking SDRAM Data Width
Minimum Clock Delay, Back-to-Back
Random Column Access
Burst Lengths Supported
Number of Banks on SDRAM Device
CAS Latencies Supported
CS Latency
WE Latency
SDRAM Module Attributes
SDRAM Device Attributes: General
SDRAM Cycle Time,
2) (See note 1)
SDRAM Access From CK,
Latency = 2) (See note 1)
SDRAM Cycle Time,
= 1.5)
SDRAM Access from CK,
Latency = 1.5)
Minimum Row Precharge Time,
(see note 4)
Minimum Row Active to Row Active,
t
Minimum RAS# to CAS# Delay,
(see note 4)
Minimum RAS# Pulse Width,
(See note 2)
RRD
DESCRIPTION
t
t
t
CK (CAS Latency =
CK, (CAS Latency
CK, (CAS Latency
t
AC, (CAS
t
AC (CAS
t
AC, (CAS
t
RAS
t
RCD
t
RP
0.75ns (-262/-26A/-265)
7.5ns (-335/-262/-26A)
0.75ns (-262/-26A/-265)
Unbuffered, Diff CLK
15ns (-262/-26A/-265)
45ns (-262/-26A/-265)
15.6µs or 7.8µs/SELF
ENTRY (VERSION)
Fast/Concurrent AP
20ns (-26A/-265)
20ns (-26A/-265)
7ns (-262/-26A)
0.70ns (-335)
0.70ns (-335)
SDRAM DDR
7.5ns (-265)
10ns (-265)
18ns (-335)
15ns (-262)
12ns (-335)
18ns (-335)
15ns (-262)
42ns (-335)
6ns (-335)
SSTL 2.5V
Non-ECC
12 or 13
9 or 10
1 clock
2, 4, 8
None
2, 2.5
128
256
N/A
N/A
x16
64
1
0
4
0
1
26
64MB, 128MB, 256MB (x64, SR)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT4VDDT864A MT4VDDT1664A MT4VDDT3264A
184-PIN DDR SDRAM UDIMM
A0
2A
2D
80
08
07
0C
09
01
40
00
04
60
70
75
70
75
00
80
10
00
01
0E
04
0C
01
02
20
C1
75
70
75
00
00
48
3C
50
30
3C
48
3C
50
0D
A0
2A
2D
80
08
07
09
01
40
00
04
60
70
75
70
75
00
82
10
00
01
0E
04
0C
01
02
20
C1
75
70
75
00
00
48
3C
50
30
3C
48
3C
50
©2004 Micron Technology, Inc.
0D
0A
A0
2A
2D
80
08
07
01
40
00
04
60
70
75
70
75
00
82
10
00
01
0E
04
0C
01
02
20
C1
75
70
75
00
00
48
3C
50
30
3C
48
3C
50