MT4HTF6464AY-53EA1 Micron Technology Inc, MT4HTF6464AY-53EA1 Datasheet - Page 8

• Manufacturer Part Number: MT4HTF6464AY-53EA1
• Description: MODULE SDRAM DDR2 512MB 240DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4HTF6464AY-53EA1

• Memory Type: DDR2 SDRAM
• Memory Size: 512MB
• Speed: 533MT/s
• Package / Case: 240-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Table 8: Absolute Maximum Ratings
PDF: 09005aef80ed6fda
htf4c16_32_64x64ay – Rev. H 3/10 EN
V
V
Symbol
DD
IN
I
VREF
, V
T
I
T
/V
OZ
I
C
A
I
1
DDQ
OUT
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
under test = 0V)
Output leakage current; 0V ≤ V
and ODT are disabled
V
Module ambient operating temperature
DDR2 SDRAM component operating tempera-
ture
DD
REF
REF
/V
2
input 0V ≤ V
leakage current; V
DDQ
Notes:
supply voltage relative to V
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in the device data sheet are not implied. Exposure to
absolute maximum rating conditions for extended periods may adversely affect reliability.
1. The refresh rate is required to double when T
2. For further information, refer to technical note TN-00-08: "Thermal Applications," avail-
128MB, 256MB, 512MB (x64, SR) 240-Pin DDR2 SDRAM UDIMM
IN
able on Micron’s Web site.
≤ 0.95V; (All other pins not
REF
= valid V
OUT
SS
REF
≤ V
SS
level
DDQ
IN
≤ V
; DQ
8
DD
;
Address inputs, RAS#,
CAS#, WE#, S#, CKE,
ODT, BA
CK, CK#
DM
DQ, DQS, DQS#
Commercial
Industrial
Commercial
Industrial
Micron Technology, Inc. reserves the right to change products or specifications without notice.
C
exceeds 85°C.
Electrical Specifications
Min
–0.5
–0.5
–20
–10
–40
–40
–5
–5
–8
0
0
© 2003 Micron Technology, Inc. All rights reserved.
Max
2.3
2.3
20
10
70
85
85
95
5
5
8
Units
µA
µA
µA
°C
°C
°C
°C
V
V