MT36VDDF25672Y-40BD2 Micron Technology Inc, MT36VDDF25672Y-40BD2 Datasheet - Page 18

• Manufacturer Part Number: MT36VDDF25672Y-40BD2
• Description: MODULE SDRAM DDR 2GB 184DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT36VDDF25672Y-40BD2

• Memory Type: DDR SDRAM
• Memory Size: 2GB
• Speed: 400MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 16: Capacitance
Note: 11; notes appear following parameter tables
Table 17: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 14; notes appear following parameter tables; 0°C
pdf: 09005aef80772fd2, source: 09005aef8075ebf6
DDF36C128_256x72G.fm - Rev. D 9/04 EN
AC CHARACTERISTICS
PARAMETER
Access window of DQs from CK/CK#
CK high-level width
CK low-level width
Clock cycle time
DQ and DM input hold time relative to DQS
DQ and DM input setup time relative to DQS
DQ and DM input pulse width (for each input)
Access window of DQS from CK/CK#
DQS input high pulse width
DQS input low pulse width
DQS-DQ skew, DQS to last DQ valid, per group, per access
Write command to first DQS latching transition
DQS falling edge to CK rising - setup time
DQS falling edge from CK rising - hold time
Half clock period
Data-out high-impedance window from CK/CK#
Data-out low-impedance window from CK/CK#
Address and control input hold time (fast slew rate)
Address and control input setup time (fast slew rate)
Address and control input hold time (slow slew rate)
Address and control input setup time (slow slew rate)
Address and Control input pulse width (for each input)
LOAD MODE REGISTER command cycle time
DQ-DQS hold, DQS to first DQ to go non-valid, per access
Data hold skew factor
ACTIVE to PRECHARGE command
ACTIVE to READ with Auto precharge command
ACTIVE to ACTIVE/AUTO REFRESH command period
AUTO REFRESH command period
ACTIVE to READ or WRITE delay
PRECHARGE command period
PARAMETER
Input/Output Capacitance: DQ, DQS
Input Capacitance: Command and Address, S#, CKE
Input Capacitance: CK, CK#
Operating Conditions (-335 and -262 Speed Grades)
CL = 2.5
CL = 2
18
SYMBOL
t
t
CK (2.5)
t
t
DQSCK
t
t
t
t
t
CK (2)
DQSH
DQSQ
t
DIPW
DQSL
DQSS
t
t
t
t
T
t
t
t
MRD
t
t
t
t
DSH
t
t
QHS
RCD
t
t
t
RAS
RAP
t
t
DSS
t
t
t
IPW
RFC
t
DH
QH
A
AC
CH
IH
IH
DS
HP
HZ
RC
RP
CL
LZ
IS
IS
F
S
F
S
+70°C; V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-0.60
-0.70
t
t
MIN
0.45
0.45
0.45
0.45
1.75
0.35
0.35
0.75
0.75
0.75
0.80
0.80
-0.7
QHS
HP -
7.5
0.2
0.2
2.2
12
42
15
60
72
15
15
6
t
DD
CH,
-335
SYMBOL
1GB, 2GB (x72, ECC, DR)
= V
120,000
t
MAX
+0.60
+0.70
CL
+0.7
C
C
C
0.55
0.55
0.35
1.25
0.50
13
13
I0
I1
I2
DD
Q = +2.5V ±0.2V
184-PIN DDR RDIMM
-0.75
-0.75
-0.75
t
MIN
t
0.45
0.45
1.75
0.35
0.35
0.75
0.90
0.90
QHS
HP -
7.5
7.5
0.5
0.5
0.2
0.2
2.2
15
40
15
60
75
15
15
1
1
t
CH,
-262
©2004 Micron Technology, Inc. All rights reserved.
120,000
MIN
t
MAX
+0.75
+0.75
+0.75
2.5
CL
0.55
0.55
1.25
0.75
8
–
0.5
13
13
MAX
3.5
10
4
UNITS NOTES
t
t
t
t
t
t
t
ns
CK
CK
ns
ns
ns
ns
ns
ns
CK
CK
ns
CK
CK
CK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
UNITS
40, 47
23, 27
23, 27
22, 23
16, 37
16, 37
22, 23
31, 49
pF
pF
pF
40,47
12
12
45
26
26
27
30
12
12