MT36LSDT12872G-13ED2 Micron Technology Inc, MT36LSDT12872G-13ED2 Datasheet - Page 26

• Manufacturer Part Number: MT36LSDT12872G-13ED2
• Description: MODULE SDRAM 1GB 168DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT36LSDT12872G-13ED2

• Memory Type: SDRAM
• Memory Size: 1GB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 20:
PDF: 09005aef80b1835d/Source: 09005aef80b18348
SD36C128_256x72G.fm - Rev. E 6/05 EN
Parameter/Condition
Stop condition setup time
WRITE cycle time
Serial Presence-Detect EEPROM AC Operating Conditions
All voltages referenced to V
Notes: 1. To avoid spurious START and STOP conditions, a minimum delay is placed between
2. This parameter is sampled.
3. For a reSTART condition, or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
SCL=1 and the falling or rising edge of SDA.
write sequence to the end of the EEPROM internal erase/program cycle. During the
WRITE cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to
pull-up resistor, and the EEPROM does not respond to its slave address.
SS
; V
DDSPD
= +2.3V to +3.6V
1GB, 2GB: (x72, ECC, DR) 168-Pin SDRAM RDIMM
26
Symbol
t
SU:STO
t
WRC
t
WRC) is the time from a valid stop condition of a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
0.6
Serial Presence Detect
Max
10
©2002 Micron Technology, Inc. All rights reserved.
Units
ms
µs
Notes
4