MT18VDDF12872Y-335D3 Micron Technology Inc, MT18VDDF12872Y-335D3 Datasheet - Page 2
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MT18VDDF12872Y-335D3
Manufacturer Part Number
MT18VDDF12872Y-335D3
Description
MODULE SDRAM DDR 1GB 184DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT18VDDF12872Y-335D3.pdf
(17 pages)
Specifications of MT18VDDF12872Y-335D3
Memory Type
DDR SDRAM
Memory Size
1GB
Speed
333MT/s
Package / Case
184-DIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
184RDIMM
Device Core Size
72b
Organization
128Mx72
Total Density
1GByte
Chip Density
512Mb
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
3.15A
Number Of Elements
18
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
184
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant
Table 1:
Table 2:
Table 3:
Table 4:
PDF: 09005aef8074e85b/Source: 09005aef8072fe49
DDF18C64_128x72.fm - Rev. F 9/08 EN
Parameter
Part Number
Part Number
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
MT18VDDF6472G-40B__
MT18VDDF6472Y-40B__
MT18VDDF6472G-335__
MT18VDDF6472Y-335__
MT18VDDF6472G-265__
MT18VDDF12872G-40B__
MT18VDDF12872Y-40B__
MT18VDDF12872G-335__
MT18VDDF12872Y-335__
MT18VDDF12872G-26A__
MT18VDDF12872G-265__
MT18VDDF12872Y-265__
Speed
Grade
-26A
-40B
-335
-265
Key Timing Parameters
Addressing
Part Numbers and Timing Parameters – 512MB Modules
Base device: MT46V64M4,
Part Numbers and Timing Parameters – 1GB Modules
Base device: MT46V128M4,
2
2
Nomenclature
Notes:
Notes:
Industry
PC3200
PC2700
PC2100
PC2100
1. The values of
1. The data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
actual DDR SDRAM device specifications are 15ns.
PCB revisions. Consult factory for current revision codes.
Example: MT18VDDF12872Y-335F1.
Module
Density
Module
Density
512MB
512MB
512MB
512MB
512MB
1GB
1GB
1GB
1GB
1GB
1GB
1GB
1
1
CL = 3
256Mb DDR SDRAM
400
512Mb DDR SDRAM
–
–
–
t
512MB, 1GB (x72, ECC, SR) 184-Pin DDR SDRAM RDIMM
RCD and
Configuration
Configuration
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
Data Rate (MT/s)
64 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
64 Meg x 72
CL = 2.5
t
333
333
266
266
RP for -335 modules show 18ns to align with industry specifications;
256Mb (64 Meg x 4)
2K (A0–A9, A11)
2
4 (BA0, BA1)
8K (A0–A12)
512MB
1 (S0#)
CL = 2
Bandwidth
Bandwidth
8K
266
266
266
200
Module
Module
3.2 GB/s
3.2 GB/s
2.7 GB/s
2.7 GB/s
2.1 GB/s
3.2 GB/s
3.2 GB/s
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
2.1 GB/s
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
(ns)
RCD
15
18
20
20
Memory Clock/
Memory Clock/
5.0ns/400 MT/s
5.0ns/400 MT/s
6.0ns/333 MT/s
6.0ns/333 MT/s
7.5ns/266 MT/s
5.0ns/400 MT/s
5.0ns/400 MT/s
6.0ns/333 MT/s
6.0ns/333 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
Data Rate
Data Rate
(ns)
t
15
18
20
20
RP
4K (A0–A9, A11, A12)
512Mb (128 Meg x 4)
©2003 Micron Technology, Inc. All rights reserved.
4 (BA0, BA1)
8K (A0–A12)
1 (S0#)
1GB
(ns)
8K
t
55
60
65
65
RC
(CL-
(CL-
Clock Cycles
Clock Cycles
2.5-3-3
2.5-3-3
2.5-3-3
t
t
3-3-3
3-3-3
3-3-3
3-3-3
3-3-3
3-3-3
3-3-3
3-3-3
2-3-3
RCD-
RCD-
Features
Notes
t
t
RP)
RP)
1