MT18LSDT3272AG-13EG1 Micron Technology Inc, MT18LSDT3272AG-13EG1 Datasheet - Page 13
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MT18LSDT3272AG-13EG1
Manufacturer Part Number
MT18LSDT3272AG-13EG1
Description
MODULE SDRAM 256MB 168DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT9LSDT1672AY-133G3.pdf
(26 pages)
Specifications of MT18LSDT3272AG-13EG1
Memory Type
SDRAM
Memory Size
256MB
Speed
133MHz
Package / Case
168-DIMM
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 10: DC Electrical Characteristics and Operating Conditions – 128MB
Notes: 1, 5, 6; notes appear on page 18; V
Table 11: DC Electrical Characteristics and Operating Conditions – 256MB
Notes: 1, 5, 6; notes appear on page 18; V
09005aef807b3709
SD9_18C16_32x72AG.fm - Rev. E 6/04 EN
PARAMETER/CONDITION
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V ≤ VIN ≤ V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: DQ pins are
disabled; 0V ≤ V
OUTPUT LEVELS:
Output High Voltage (I
Output Low Voltage (I
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V ≤ VIN ≤ V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: DQ pins are
disabled; 0V ≤ V
OUTPUT LEVELS:
Output High Voltage (I
Output Low Voltage (I
Stresses greater than those listed may cause perma-
Voltage on V
Voltage on Inputs NC or I/O Pins
Relative to V
Relative to V
DD
OUT
OUT
SS
SS
, V
≤ V
≤ V
. . . . . . . . . . . . . . . . . . . . . -1V to +4.6V
. . . . . . . . . . . . . . . . . . . . -1V to +4.6V
DD
OUT
OUT
DD
OUT
DD
OUT
DD
DD
Q Supply
= 4mA)
= 4mA)
Q
Q
= -4mA)
= -4mA)
DD
DD
, V
, V
128MB (x72, ECC, SR), 256MB (x72, ECC, DR)
DD
DD
Q = +3.3V ±0.3V
Q = +3.3V ±0.3V
Command and
Address Inputs,
CKE0
CK0, S0#
CK2, S2#
DQMB
DQ
Command and
Address Inputs
CKE0, CKE1
CK0, CK1, S0#, S1#
CK2, CK3, S2#, S3#
DQMB
DQ
13
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
Operating Temperature
Storage Temperature (plastic) . . . . . . -55°C to +150°C
V
SYMBOL
DD
T
T
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
SYMBOL
OPR
OPR
V
V
V
DD
, V
I
V
OZ
I
OH
OL
IH
IL
I
V
V
V
, V
V
I
DD
OZ
I
OH
OL
IH
(Commercial - ambient) . . . . .. 0°C to +65°C
(Industrial - ambient) . . . . . . .-40°C to +85°C
IL
I
DD
Q
168-PIN SDRAM UDIMM
Q
MIN
-0.3
-45
-25
-20
2.4
MIN
-5
-5
-0.3
3
2
-90
-45
-25
-20
-10
–
2.4
-5
3
2
–
V
V
DD
MAX
DD
MAX
3.6
0.8
0.4
45
25
20
3.6
0.8
0.4
5
5
–
90
45
25
20
10
+ 0.3
5
–
+ 0.3
UNITS
UNITS
©2004 Micron Technology, Inc.
µA
µA
V
V
V
V
V
µA
µA
V
V
V
V
V
NOTES
NOTES
22
22
33
33
22
22
33
33