MT18LSDT12872G-13EC2 Micron Technology Inc, MT18LSDT12872G-13EC2 Datasheet - Page 8

• Manufacturer Part Number: MT18LSDT12872G-13EC2
• Description: MODULE SDRAM 1GB 168DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18LSDT12872G-13EC2

• Memory Type: SDRAM
• Memory Size: 1GB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Specifications
Table 7:
Table 8:
Design Considerations
Component AC Timing and Operating Conditions
Table 9:
PDF: 09005aef809b161a/Source: 09005aef809b15eb
SD18C32_64_128x72.fm - Rev. E 1/08 EN
V
V
Symbol
Symbol
DD
IN
T
V
V
V
, V
V
, V
V
I
OPR
OZ
DD
I
OH
OL
IH
IL
I
OUT
DD
Q
Absolute Maximum Ratings
Operating Conditions
Module and Component Speed Grades
SDRAM components meet or exceed the listed module speed grades
Parameter/Condition
Voltage on V
Voltage on inputs, NC, or I/O pins relative to V
Parameter/Condition
Supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Input leakage current: Any input 0V ≤ V
(All other pins not under test = 0V)
Output leakage current: DQ pins are disabled;
0V ≤ V
Output high voltage (I
Output low voltage (I
Ambient operating temperature (commercial)
Module Speed Grade
OUT
≤ V
DD
DD
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
adversely affect reliability.
Micron memory modules are designed to optimize signal integrity through carefully
designed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system’s
memory bus to ensure adequate signal integrity of the entire memory system.
Recommended AC operating conditions are given in the SDRAM component data
sheets. Component specifications are available on Micron’s Web site. Module speed
grades correlate with component speed grades, as shown in Table 9.
-13E
-133
supply relative to V
Q
OUT
OUT
= 4mA)
256MB, 512MB, 1GB (x72, ECC, SR): 168-Pin SDRAM RDIMM
= –4mA)
SS
IN
≤ V
DD
SS
8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Address inputs,
RAS#, CAS#, WE#,
BA, CK, CKE, S#
DQMB
DQ
Component Speed Grade
Electrical Specifications
-7E
-75
Min
Min
+3.0
+2.0
+2.4
–1.0
–1.0
–0.3
–10
–5
–5
©2003 Micron Technology, Inc. All rights reserved
–
0
V
DD
Max
Max
+4.6
+4.6
+3.6
+10
+55
0.8
0.4
+5
+5
–
+ 0.3
Units
Units
µA
µA
µA
°C
V
V
V
V
V
V
V