MT18LSDT12872AG-133C1 Micron Technology Inc, MT18LSDT12872AG-133C1 Datasheet - Page 24

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MT18LSDT12872AG-133C1

Manufacturer Part Number
MT18LSDT12872AG-133C1
Description
MODULE SDRAM 1GB 168DIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT18LSDT12872AG-133C1

Memory Type
SDRAM
Memory Size
1GB
Speed
133MHz
Package / Case
168-DIMM
Main Category
DRAM Module
Sub-category
SDRAM
Module Type
168UDIMM
Device Core Size
72b
Organization
128Mx72
Total Density
1GByte
Chip Density
512Mb
Access Time (max)
6/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Operating Current
1.157A
Number Of Elements
18
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 65C
Operating Temperature Classification
Commercial
Pin Count
168
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 21:
PDF: 09005aef8088b1bf/Source: 09005aef808807ca
SD9_18C64_128X72AG.fm - Rev. C 6/05 EN
Parameter/Condition
Stop condition setup time
WRITE cycle time
Serial Presence-Detect EEPROM AC Operating Conditions (continued)
All voltages referenced to V
Notes: 1. To avoid spurious start and stop conditions, a minimum delay is placed between SCL = 1
2. This parameter is sampled.
3. For a restart condition or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
and the falling or rising edge of SDA.
write sequence to the end of the EEPROM internal ERASE/PROGRAM cycle. During the
WRITE cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pull-
up resistor, and the EEPROM does not respond to its slave address.
SS
512MB (SR), 1GB (DR): (x72, ECC) 168-Pin SDRAM UDIMM
; V
DDSPD
= +2.3V to +3.6V
24
Symbol
t
SU:STO
t
WRC
t
WRC) is the time from a valid stop condition of a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
0.6
Serial Presence Detect
Max
10
©2002 Micron Technology, Inc. All rights reserved.
Units
ms
µs
Notes
4

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