MT16VDDF6464HG-335G2 Micron Technology Inc, MT16VDDF6464HG-335G2 Datasheet - Page 2
![MODULE SDRAM DDR 512MB 200SODIMM](/photos/7/83/78349/mfg_mt_sodimm_series_sml.jpg)
MT16VDDF6464HG-335G2
Manufacturer Part Number
MT16VDDF6464HG-335G2
Description
MODULE SDRAM DDR 512MB 200SODIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT18VDDF12872HG-335D1.pdf
(10 pages)
Specifications of MT16VDDF6464HG-335G2
Memory Type
DDR SDRAM
Memory Size
512MB
Speed
333MT/s
Package / Case
200-SODIMM
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 2:
Table 3:
PDF: 09005aef80e4880c/Source: 09005aef80e487d7
DDF18C128x72H.fm - Rev. B 10/07 EN
Parameter
Part Number
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
MT18VDDF12872HG-40B__
MT18VDDF12872HY-40B__
MT18VDDF12872HG-335__
MT18VDDF12872HY-335__
MT18VDDF12872HG-26A__
MT18VDDF12872HG-265__
Addressing
Part Numbers and Timing Parameters – 1GB
Base device: MT46V64M8,
2
Notes:
1. Data sheet for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
PCB revisions. Consult factory for current revision codes.
Example: MT18VDDF12872HY-335F1.
Module
Density
1GB
1GB
1GB
1GB
1GB
1GB
1
512Mb DDR SDRAM
Configuration
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
128 Meg x 72
1GB (x72, ECC, DR) 200-Pin DDR SDRAM SODIMM
2
Bandwidth
Module
3.2 GB/s
3.2 GB/s
2.7 GB/s
2.7 GB/s
2.1 GB/s
2.1 GB/s
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb (64 Meg x 8)
2K (A0–A9, A11)
Memory Clock/
5.0ns/400 MT/s
5.0ns/400 MT/s
6.0ns/333 MT/s
6.0ns/333 MT/s
7.5ns/266 MT/s
7.5ns/266 MT/s
8K (A0–A12)
4 (BA0, BA1)
2 (S0#, S1#)
Data Rate
1GB
8K
©2004 Micron Technology, Inc. All rights reserved.
(CL-
Clock Cycles
2.5-3-3
2.5-3-3
2.5-3-3
t
3-3-3
3-3-3
2-3-3
RCD-
Features
t
RP)