MT8VDDT6464HY-335F2 Micron Technology Inc, MT8VDDT6464HY-335F2 Datasheet - Page 9

• Manufacturer Part Number: MT8VDDT6464HY-335F2
• Description: MODULE DDR SDRAM 512MB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT8VDDT6464HY-335F2

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 333MT/s
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DRAM Operating Conditions
Table 8:
Design Considerations
Simulations
Power
PDF: 09005aef8092973f / Source: 09005aef80921669
DD8C32_64x64H.fm - Rev. D 9/08 EN
Module and Component Speed Grades
DDR components may exceed the listed module speed grades
Module Speed Grade
-26A
Recommended AC operating conditions are given in the DDR component data sheets.
Component specifications are available on Micron’s Web site. Module speed grades
correlate with component speed grades, as shown in Table 8.
-40B
Micron memory modules are designed to optimize signal integrity through carefully
designed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system’s
memory bus to ensure adequate signal integrity of the entire memory system.
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to
ensure the required supply voltage is maintained.
-335
-262
-265
256MB, 512MB (x64, SR) 200-Pin DDR SDRAM SODIMM
9
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Component Speed Grade
Electrical Specifications
-75E
-75Z
-5B
-75
-6
©2004 Micron Technology, Inc. All rights reserved.