MT8VDDT6464AG-40BF3 Micron Technology Inc, MT8VDDT6464AG-40BF3 Datasheet - Page 13
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MT8VDDT6464AG-40BF3
Manufacturer Part Number
MT8VDDT6464AG-40BF3
Description
MODULE DDR SDRAM 512MB 184-DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT8VDDT6464AY-40BF4.pdf
(26 pages)
Specifications of MT8VDDT6464AG-40BF3
Memory Type
DDR SDRAM
Memory Size
512MB
Speed
400MT/s
Package / Case
184-DIMM
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 9:
PDF: 09005aef80a43556, Source: 09005aef80a43534
DDA8C16_32_64x64AG_2.fm - Rev. E 4/06 EN
Operating current: One device bank; Active-Precharge;
t
Address and control inputs changing once every two clock cycles
Operating current: One device bank; Active-Read-Pre-charge; Burst = 2;
t
changing once per clock cycle
PRECHARGE power-down standby current: All device banks idle; Power-down
mode;
Idle standby current: CS# = HIGH; All device banks idle;
HIGH; Address and other control inputs changing once per clock cycle. V
V
ACTIVE power-down standby current: One device bank active; Power-down
mode;
ACTIVE standby current: CS# = HIGH; CKE = HIGH; One device bank; Active-
Precharge;
changing twice per clock cycle; Address and other control inputs changing once
per clock cycle
Operating current: Burst = 2; Reads; Continuous burst; One device bank active;
Address and control inputs changing once per clock cycle;
= 0mA
Operating current: Burst = 2; Writes; Continuous burst; One device bank active;
Address and control inputs changing once per clock cycle;
DM, and DQS inputs changing twice per clock cycle
AUTO REFRESH current
SELF REFRESH current: CKE ≤ 0.2V
Operating current: Four device bank interleaving READs (BL= 4) with auto
precharge,
change only during ACTIVE, READ, or WRITE commands
CK =
RC =
REF
for DQ, DQS, and DM
t
t
RC (MIN);
CK (MIN); DQ, DM, and DQS inputs changing once per clock cycle;
t
t
CK =
CK =
t
t
RC = MIN
RC =
t
t
CK (MIN); CKE = LOW
CK (MIN); CKE = LOW
I
DDR SDRAM components only
Notes: 1–5, 8, 10, 12, 30; notes appear on pages 16–18; 0°C ≤ T
DD
t
CK =
t
RAS (MAX);
Specifications and Conditions – 128MB
t
RC allowed;
t
CK (MIN); I
Parameter/Condition
t
CK =
OUT
t
CK =
t
128MB, 256MB, 512MB (x64, SR): PC3200 184-Pin DDR UDIMM
CK (MIN); DQ, DM, and DQS inputs
= 0mA; Address and control inputs
t
CK (MIN); Address and control inputs
t
t
RC =
CK =
t
t
CK =
CK =
t
t
13
REFC =
REFC = 15.625µs
t
t
RC (MIN);
CK (MIN); CKE =
t
t
CK (MIN); I
CK (MIN); DQ,
t
RFC (MIN)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
IN
=
A
OUT
≤ +70°C; V
Symbol
I
I
I
I
I
I
I
DD 4 W
I
I
DD 3 N
I
DD 5 A
I
I
DD 2 P
DD 2 F
DD 3 P
DD 4 R
DD 0
DD 1
DD 5
DD 6
DD 7
DD
Electrical Specifications
= V
DD
©2005 Micron Technology, Inc. All rights reserved.
1,080
1,080
1,240
1,920
2,840
Max
-40B
920
400
200
400
24
48
32
Q = +2.6V ±0.1V
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
15, 18,
15, 18,
Notes
14, 25
14, 25
14, 24
14, 25
14, 27
16, 27
14, 26
27
28
27
14
9