MT18VDVF12872G-40BF4 Micron Technology Inc, MT18VDVF12872G-40BF4 Datasheet
MT18VDVF12872G-40BF4
Specifications of MT18VDVF12872G-40BF4
Related parts for MT18VDVF12872G-40BF4
MT18VDVF12872G-40BF4 Summary of contents
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... 400 333 266 – 333 266 t t RCD and RP for -335 modules show 18ns to align with industry specifications; Micron Technology, Inc., reserves the right to change products or specifications without notice. 1 184-Pin VLP RDIMM (MO-206) 1 ≤ +70°C) A ≤ +85° module offerings. adds one clock cycle to CL. ...
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... Part Number Density MT18VDVF12872G-40B__ MT18VDVF12872Y-40B__ MT18VDVF12872G-335__ MT18VDVF12872Y-335__ Notes: 1. Data sheets for the base device can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT18VDVF12872Y-335F1. ...
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Pin Assignments and Descriptions Table 4: Pin Assignments 184-Pin VLP RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ17 47 REF 2 DQ0 25 DQS2 DQ1 ...
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Table 5: Pin Descriptions Symbol A0–A12 BA0, BA1 CK0, CK0# CKE0 RAS#, CAS#, WE# RESET# S0# SA0–SA2 SCL CB0–CB7 DQ0–DQ63 DQS0–DQS17 SDA DDSPD V REF PDF: 09005aef81c7380b/Source: 09005aef81c7380e DVF18C_128x72.fm - Rev. ...
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Functional Block Diagram Figure 2: Functional Block Diagram V SS RS0# U6, U17 R RAS# RRAS#: DDR SDRAM e CAS# RCAS#: DDR SDRAM g CKE0 RCKE0: DDR SDRAM i WE# s RWE#: DDR SDRAM t A0–A12 RA0–RA12: DDR SDRAM e ...
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... This module uses a DDR SDRAM device with four internal banks. DDR SDRAM modules use a double data rate architecture to achieve high-speed opera- tion. The double data rate architecture is essentially a 2n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single ...
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... Simulations are significantly more accurate and realistic than a gross estimation of module capacitance when inductance and delay parameters associated with trace lengths are used in simulations. JEDEC modules are currently designed using simulations to close timing budgets. Component AC Timing and Operating Conditions Recommended AC operating conditions are given in the DDR component data sheets. Component specifications are available on Micron’ ...
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I Specifications DD Table 8: I Specifications and Conditions – 1GB DD Values are shown for the MT46V128M4 DDR SDRAM only and are computed from values specified in the 512Mb (128 Meg x 4) component data sheet Parameter/Condition Operating one ...
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Register and PLL Specifications Table 9: Register Specifications SSTV16859 devices or equivalent JESD82-4B Parameter Symbol DC high-level input voltage DC low-level input voltage AC high-level ...
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Table 10: PLL Specifications CVF857 device or equivalent JESD82-1A Parameter DC high-level input voltage DC low-level input voltage Input voltage (limits) Input differential-pair cross voltage Input differential voltage Input differential voltage Input current Dynamic supply current Dynamic supply current Dynamic ...
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Serial Presence-Detect Table 12: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...
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Module Dimensions Figure 3: 184-Pin DDR VLP RDIMM 2.0 (0.079) R (4X 2.5 (0.098) D (2X) 2.31 (0.091) TYP Pin 1 2.21 (0.087) TYP 1.27 (0.05) 1.0 (0.039) TYP U12 U13 Pin 184 Notes: 1. All dimensions are ...