MT9VDVF6472G-335F4 Micron Technology Inc, MT9VDVF6472G-335F4 Datasheet
MT9VDVF6472G-335F4
Specifications of MT9VDVF6472G-335F4
Related parts for MT9VDVF6472G-335F4
MT9VDVF6472G-335F4 Summary of contents
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... 400 333 266 – 333 266 t t RCD and RP for -335 modules show 18ns to align with industry specifications; Micron Technology, Inc., reserves the right to change products or specifications without notice. 1 184-Pin VLP RDIMM (MO-206) 1 ≤ +70°C) A ≤ +85° module offerings. adds one clock cycle to CL. ...
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... Density MT9VDVF6472G-40B__ 512MB MT9VDVF6472Y-40B__ 512MB 512MB MT9VDVF6472G-335__ 512MB MT9VDVF6472Y-335__ Notes: 1. Data sheets for the base device can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT9VDVF6472Y-335F1. ...
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Pin Assignments and Descriptions Table 4: Pin Assignments 184-Pin VLP RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ17 47 REF 2 DQ0 25 DQS2 DQ1 ...
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Table 5: Pin Descriptions Symbol A0–A12 BA0, BA1 CK0, CK0# CKE0 DM0–DM8 RAS#, CAS#, WE# RESET# S0# SA0–SA2 SCL CB0–CB7 DQ0–DQ63 DQS0–DQS8 SDA DDSPD V REF PDF: 09005aef81c737fb/Source: 09005aef81c7379d DVF9C64x72.fm - ...
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Functional Block Diagram Figure 2: Functional Block Diagram RS0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 ...
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... This module uses a DDR SDRAM device with four internal banks. DDR SDRAM modules use a double data rate architecture to achieve high-speed opera- tion. The double data rate architecture is essentially a 2n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single ...
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... Simulations are significantly more accurate and realistic than a gross estimation of module capacitance when inductance and delay parameters associated with trace lengths are used in simulations. JEDEC modules are currently designed using simulations to close timing budgets. Component AC Timing and Operating Conditions Recommended AC operating conditions are given in the DDR component data sheets. Component specifications are available on Micron’ ...
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I Specifications DD Table 8: I Specifications and Conditions – 512MB DD Values are shown for the MT46V64M8 DDR SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter/Condition Operating one ...
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Register and PLL Specifications Table 9: Register Specifications SSTV16859 devices or equivalent JESD82-4B Parameter Symbol high-level IH DC input voltage low-level IL DC input voltage AC high-level ...
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Table 10: PLL Specifications CVF857 device or equivalent JESD82-1A Parameter Symbol DC high-level input voltage low-level input voltage Input voltage (limits Input differential-pair cross IX voltage Input differential voltage ...
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Serial Presence-Detect Table 12: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...
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Module Dimensions Figure 3: 184-Pin DDR VLP RDIMM 2.0 (0.079) R (4X 2.5 (0.098) D (2X) 2.31 (0.091) TYP Pin 1 2.21 (0.087) TYP 1.27 (0.05) TYP 1.0 (0.039) TYP 64.77 (2.55) Pin 184 Notes: 1. All ...