MT9HTF6472AY-667B3 Micron Technology Inc, MT9HTF6472AY-667B3 Datasheet - Page 19

• Manufacturer Part Number: MT9HTF6472AY-667B3
• Description: MODULE DDR2 512MB 240-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9HTF6472AY-667B3

• Memory Type: DDR2 SDRAM
• Memory Size: 512MB
• Speed: 667MT/s
• Package / Case: 240-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 14: DDR2 I
Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com-
ponent data sheet
PDF: 09005aef80e8ad4d
htf9c32_64_128x72ay – Rev. F 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
=
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
t
CK (I
OUT
DD
),
= 0mA; BL = 4, CL = CL (I
t
RC =
t
RC (I
DD
DD
Specifications and Conditions (Die Revision E) – 1GB (Continued)
),
t
RRD =
t
RRD (I
DD
), AL =
256MB, 512MB, 1GB (x72, SR, ECC) 240-Pin DDR2 UDIMM
DD
),
t
t
RCD (I
RCD =
DD
t
RCD (I
) - 1 ×
DD
19
t
CK (I
); CKE is
DD
);
t
CK
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
-80E/
3015
-800
2520
-667
© 2003 Micron Technology, Inc. All rights reserved.
I
DD
2430
-53E
Specifications
-40E
2340
Units
mA