MT8VDDT6464AY-335D3 Micron Technology Inc, MT8VDDT6464AY-335D3 Datasheet - Page 10

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MT8VDDT6464AY-335D3

Manufacturer Part Number
MT8VDDT6464AY-335D3
Description
MODULE DDR 512MB 184-DIMM
Manufacturer
Micron Technology Inc

Specifications of MT8VDDT6464AY-335D3

Memory Type
DDR SDRAM
Memory Size
512MB
Speed
333MT/s
Package / Case
184-DIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
184UDIMM
Device Core Size
64b
Organization
64Mx64
Total Density
512MByte
Chip Density
512Mb
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
1.4A
Number Of Elements
8
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
184
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
I
Table 9:
PDF: 09005aef80867ab3/Source: 09005aef80867a99
DD8C32_64x64A.fm - Rev. J 8/08 EN
Parameter/Condition
Operating one bank active-precharge current:
(MIN); DQ, DM, and DQS inputs changing once per clock cycle; Address and
control inputs changing once every two clock cycles
Operating one bank active-read-precharge current: BL = 2;
t
cycle
Precharge power-down standby current: All device banks idle; Power-down
mode;
Idle standby current: CS# = HIGH; All device banks idle;
CKE = HIGH; Address and other control inputs changing once per clock cycle;
V
Active power-down standby current: One device bank active; Power-down
mode;
Active standby current: CS# = HIGH; CKE = HIGH; One device bank active;
=
clock cycle; Address and other control inputs changing once per clock cycle
Operating burst read current: BL = 2; Continuous burst reads; One device
bank active; Address and control inputs changing once per clock cycle;
(MIN); I
Operating burst write current: BL = 2; Continuous burst writes; One device
bank active; Address and control inputs changing once per clock cycle;
(MIN); DQ, DM, and DQS inputs changing twice per clock cycle
Auto refresh current
Self refresh current: CKE ≤ 0.2V
Operating bank interleave read current: Four device bank interleaving
reads; BL = 4 with auto precharge;
control inputs change only during active READ or WRITE commands
DD
CK =
IN
t
RAS (MAX);
= V
Specifications
t
CK (MIN); I
REF
t
t
OUT
CK =
CK =
for DQ, DM, and DQS
= 0mA
t
t
CK (MIN); CKE = LOW
CK (MIN); CKE = LOW
I
Values are shown for the
256Mb (32 Meg x 8) component data sheet
t
DD
CK =
OUT
Specifications and Conditions – 256MB (Die Revision ‘K’)
t
= 0mA; Address and control inputs changing once per clock
CK (MIN); DQ, DM, and DQS inputs changing twice per
t
RC =
MT46V32M8
t
RC (MIN);
256MB, 512MB (x64, SR) 184-Pin DDR SDRAM UDIMM
t
RC =
t
CK =
DDR SDRAM only and are computed from values specified in the
t
RC (MIN);
t
t
t
REFC =
REFC = 7.8125µs
CK (MIN); Address and
t
CK =
10
t
t
RC =
CK (MIN);
t
t
RC (MIN)
CK =
t
RC (MIN);
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
t
t
CK =
CK =
CK
t
t
t
RC
CK
CK
Symbol
I
I
I
I
I
I
I
DD
I
I
DD
DD
I
DD
I
I
DD
DD
DD
DD
DD
DD
DD
DD
4W
3N
5A
4R
2P
2F
3P
0
1
5
6
7
Electrical Specifications
©2003 Micron Technology, Inc. All rights reserved.
1,440
1,440
1,280
2,320
-40B
800
960
400
280
480
32
48
32
1,280
1,280
1,280
2,160
-335
720
920
400
240
440
32
48
32
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA

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