MT8HTF6464AY-667B8 Micron Technology Inc, MT8HTF6464AY-667B8 Datasheet - Page 13

• Manufacturer Part Number: MT8HTF6464AY-667B8
• Description: MODULE DDR2 512MB 240-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT8HTF6464AY-667B8

• Memory Type: DDR2 SDRAM
• Memory Size: 512MB
• Speed: 667MT/s
• Package / Case: 240-DIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240UDIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 512Mb
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.44A
• Number Of Elements: 8
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 10: DDR2 I
Values shown for MT47H32M8 DDR2 SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8)
component data sheet
PDF: 09005aef80e2ff8d
htf8c32_64_128x64aypdf - Rev. G 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
t
S# is HIGH between valid commands; Address bus inputs are stable during
deselects; Data bus inputs are switching
CK (I
DD
OUT
),
t
RC =
= 0mA; BL = 4, CL = CL (I
t
RC (I
DD
DD
),
Specifications and Conditions – 256MB (Continued)
t
RRD =
t
RRD (I
256MB, 512MB, 1GB (x64, SR) 240-Pin DDR2 SDRAM UDIMM
DD
), AL =
DD
),
t
RCD =
t
RCD (I
t
RCD (I
DD
) - 1 ×
DD
); CKE is HIGH,
13
t
CK (I
DD
);
t
CK =
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
-667
2000
© 2003 Micron Technology, Inc. All rights reserved.
I
DD
1920
-53E
Specifications
-40E
1840
Units
mA