MT36VDDF25672Y-335F2 Micron Technology Inc, MT36VDDF25672Y-335F2 Datasheet - Page 24
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT36VDDF25672Y-335F2
Manufacturer Part Number
MT36VDDF25672Y-335F2
Description
MODULE DDR 2GB 184-DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT36VDDF25672G-335D2.pdf
(37 pages)
Specifications of MT36VDDF25672Y-335F2
Memory Type
DDR SDRAM
Memory Size
2GB
Speed
333MT/s
Package / Case
184-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
pdf: 09005aef80772fd2, source: 09005aef8075ebf6
DDF36C128_256x72G.fm - Rev. D 9/04 EN
40. The current Micron part operates below the slow-
41. For -335, -262, -26A, and -265, I
42. Random address changing and 50 percent of data
43. Random address changing and 100 percent of
44. CKE must be active (high) during the entire time a
45. I
est JEDEC operating frequency of 83 MHz. As
such, future die may not reflect this option.
to be 35mA per DDR SDRAM device at 100 MHz.
changing at every transfer.
data changing at every transfer.
refresh command is executed. That is, from the
time the AUTO REFRESH command is registered,
CKE must be active at each rising clock edge, until
t
driven to a valid high or low logic level. I
similar to I
REF later.
DD
2N specifies the DQ, DQS, and DM to be
DD
2F except I
DD
2Q specifies the
DD
3N is specified
DD
2Q is
24
46. Whenever the operating frequency is altered, not
47. Leakage number reflects the worst case leakage
48. When an input signal is HIGH or LOW, it is
49. The -335 speed grade will operate with
address and control inputs to remain stable.
Although I
I
including jitter, the DLL is required to be reset.
This is followed by 200 clock cycles (before READ
commands).
possible through the module pin, not what each
memory device contributes.
defined as a steady state logic HIGH or LOW.
= 40ns and
frequency.
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2F is “worst case.”
1GB, 2GB (x72, ECC, DR)
DD
t
RAS (MAX) = 120,000ns at any slower
2F, I
184-PIN DDR RDIMM
DD
2N, and I
©2004 Micron Technology, Inc. All rights reserved.
DD
2Q are similar,
t
RAS (MIN)