MT36HTJ51272Y-40EA2 Micron Technology Inc, MT36HTJ51272Y-40EA2 Datasheet

MODULE DDR2 4GB 240-DIMM

MT36HTJ51272Y-40EA2

Manufacturer Part Number
MT36HTJ51272Y-40EA2
Description
MODULE DDR2 4GB 240-DIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT36HTJ51272Y-40EA2

Memory Type
DDR2 SDRAM
Memory Size
4GB
Speed
400MT/s
Package / Case
240-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DDR2 SDRAM Registered DIMM (RDIMM)
MT36HTJ51272(P) – 4GB
For the latest data sheet and for component data sheets, refer to Micron's Web site:
Features
• Supports 95
• 240-pin, registered dual in-line memory module
• Fast data transfer rates: PC2-3200, PC2-4200, or
• Supports ECC error detection and correction
• V
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4-bit prefetch architecture
• DLL to align DQ and DQS transitions with CK
• Dual rank
• Multiple internal device banks for concurrent
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
Table 1:
Table 2:
PDF: 09005aef822553c2/Source: 09005aef822553af
HT36HTJ51272.fm - Rev. B 7/06 EN
Refresh count
Row address
Device bank address
Device page size per bank
Device configuration
Column address
Module rank address
PC2-5300
operation
DD
DDSPD
Speed
Grade
-667
-53E
-40E
= V
DD
= +1.7V to +3.6V
Q = +1.8V
Key Timing Parameters
Addressing
°
Products and specifications discussed herein are subject to change by Micron without notice.
C with double refresh
Industry Nomenclature
PC2-5300
PC2-4200
PC2-3200
t
CK
CL = 5
667
Data Rate (MT/s)
4GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
CL = 4
533
533
400
1
Figure 1:
Notes: 1. CL = CAS (READ) latency; registered mode
Options
• Parity
• Package
• Frequency/CAS latency
• PCB height
Height: 30mm (1.18in)
240-pin DIMM (lead-free)
3.0ns @ CL = 5 (DDR2-667)
3.75ns @ CL = 4 (DDR2-533)
5.0ns @ CL = 3 (DDR2-400)
30mm (1.18in)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Contact Micron for product availability.
CL = 3
400
400
400
will add one clock cycle to CL.
240-Pin DIMM (MO-237 R/C “K”)
www.micron.com
t
(ns)
RCD
15
15
15
1
©2003 Micron Technology, Inc. All rights reserved.
2
1Gb (256 Meg x 4)
(ns)
t
2K (A0–A9, A11)
15
15
15
RP
16K (A0–A13)
8 (BA0–BA2)
2 (S0#, S1#)
4GB
1KB
8K
Marking
Features
-53E
-40E
-667
P
Y
(ns)
t
55
55
55
RC

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MT36HTJ51272Y-40EA2 Summary of contents

Page 1

DDR2 SDRAM Registered DIMM (RDIMM) MT36HTJ51272(P) – 4GB For the latest data sheet and for component data sheets, refer to Micron's Web site: Features • Supports 95 C with double refresh ° • 240-pin, registered dual in-line memory module • ...

Page 2

... MT36HTJ51272(P)Y-667__ MT36HTJ51272(P)Y-53E__ MT36HTJ51272(P)Y-40E__ Notes: 1. All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult factory for current revision codes. Example: MT36HTJ51272Y-667C2. Pin Assignments and Descriptions Table 4: Pin Assignments 240-Pin RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol ...

Page 3

Table 5: Pin Descriptions Symbol Type ODT0, ODT1 Input On-die termination: ODT (registered HIGH) enables termination resistance internal to the (SSTL18) DDR2 SDRAM. When enabled, ODT is only applied to the following pins: DQ, DQS, DQS#, and CB. The ODT ...

Page 4

Functional Block Diagram Figure 2: Functional Block Diagram Rank 0 = U1b-U5b, U9b-U16b, U18b-U22b Rank 1 = U1t-U5t, U9t-U16t, U18t-U22t U7 Serial PD SCL SDA SA0 SA1 SA2 U6, U17 ...

Page 5

... READs and by the memory controller during WRITEs. DQS is edge- aligned with data for READs and center-aligned with data for WRITEs. DDR2 SDRAM modules operate from a differential clock (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. ...

Page 6

... When inductance and delay parameters associated with trace lengths are used in simulations, they are significantly more accurate and real- istic than a gross estimation of module capacitance. Simulations can then render a considerably more accurate result. JEDEC modules are now designed by using simula- tions to close timing budgets. I ...

Page 7

Table 7: DDR2 I Specifications and Conditions – 4GB (continued) DD Values shown for MT47H256M4 DDR2 SDRAM only and are computed from values specified in the 1Gb (256 Meg x 4) component data sheet Parameter/Condition Precharge power-down current: All device ...

Page 8

AC Timing and Operating Conditions Recommended AC operating conditions are given in the DDR2 component data sheets. Component specifications are available on Micron’s Web site: www.micron.com. Module speed grades correlate with component speed grades as shown in Table 8: Table ...

Page 9

PLL Table 10: PLL (CU877 device or equivalent JESD82-8.01) Parameter Symbol V DC high-level input voltage DC low-level input voltage V Input voltage (limits high-level input voltage low-level input voltage Input differential-pair cross V voltage ...

Page 10

Table 11: PLL Clock Driver Timing Requirements and Switching Characteristics Note: 1 Parameter Stabilization time Input clock slew rate SSC modulation frequency SSC clock input frequency deviation PLL loop bandwidth (–3dB from unity gain) Notes: 1. PLL specifications are critical ...

Page 11

Table 13: Serial Presence-Detect EEPROM AC Operating Conditions All voltages referenced to V Parameter/Condition SCL LOW to SDA data-out valid Time the bus must be free before a new transition can start Data-out hold time SDA and SCL fall time ...

Page 12

Table 14: Serial Presence-Detect Matrix “1”/“0”: serial data, “driven to HIGH”/“driven to LOW” Byte 0 Number of SPD bytes used by Micron 1 Total number of bytes in SPD device 2 Fundamental memory type 3 Number of row addresses on ...

Page 13

Table 14: Serial Presence-Detect Matrix (continued) “1”/“0”: serial data, “driven to HIGH”/“driven to LOW” Byte 32 Address and command setup time, 33 Address and command hold time, 34 Data/data mask input setup time, 35 Data/data mask input hold time, t ...

Page 14

Module Dimensions Figure 3: 240-Pin DDR2 DIMM 2.00 (0.079) R (4X 2.50 (0.098) D (2X) 2.30 (0.091) TYP PIN 1 2.21 (0.087) TYP 1.0 (0.039) TYP 70.66 (2.782) TYP U13 U14 U15 PIN 240 3.04 (0.1197) TYP ...

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