MT16VDDT6464AY-335G6 Micron Technology Inc, MT16VDDT6464AY-335G6 Datasheet - Page 31
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MT16VDDT6464AY-335G6
Manufacturer Part Number
MT16VDDT6464AY-335G6
Description
MODULE DDR 512MB 184-DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT16VDDT12864AY-335F2.pdf
(35 pages)
Specifications of MT16VDDT6464AY-335G6
Memory Type
DDR SDRAM
Memory Size
512MB
Speed
333MT/s
Package / Case
184-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 22: Serial Presence-Detect Matrix (256MB, 512MB, and 1GB) (Continued)
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes appear on page 31
NOTE:
pdf: 09005aef80739fa5, source: 09005aef807397e5
DD16C32_64_128_256x64AG.fm - Rev. C 9/04 EN
1. Value for -26A
2. The value of
3. The JEDEC SPD specification allows fast or slow slew rate values for these bytes. The worst-case (slow slew rate) value is
4. The value of
99-127 Manufacturer-Specific Data (RSVD)
BYTE
95-98 Module Serial Number
94
represented here. Systems requiring the fast slew rate setup and hold values are supported, provided the faster mini-
mum slew rate is met.
SDRAM device specification is 15ns.
Week of Manufacture in BCD
t
t
RAS used for -26A/-265 modules is calculated from
RP,
t
CK set to 7ns (0x70) for optimum BIOS compatibility. Actual device spec. value is 7.5ns.
DESCRIPTION
t
RCD and
t
RAP for -335 modules indicated as 18ns to align with industry specifications; actual DDR
ENTRY (VERSION)
31
256MB, 512MB, 1GB, 2GB (x64, DR)
t
RC -
MT16VDDT3264A MT16VDDT6464A MT16VDDT12864A
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Variable Data
Variable Data
184-PIN DDR SDRAM UDIMM
t
RP. Actual device spec. value is 40 ns.
–
Variable Data
Variable Data
–
©2004 Micron Technology, Inc.
Variable Data
Variable Data
–