MT16VDDT6464AG-40BG6 Micron Technology Inc, MT16VDDT6464AG-40BG6 Datasheet - Page 19

• Manufacturer Part Number: MT16VDDT6464AG-40BG6
• Description: MODULE DDR 512MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16VDDT6464AG-40BG6

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 400MT/s
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184UDIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 256Mb
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 2.6V
• Operating Current: 1.632A
• Number Of Elements: 16
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.5V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 17: DDR SDRAM Component Electrical Characteristics and Recommended
Notes: 1–5, 13-15, 29, 48, 49; notes appear on pages 20–23; 0°C
pdf: 09005aef80739fa5, source: 09005aef807397e5
DD16C32_64_128_256x64AG.fm - Rev. C 9/04 EN
AC CHARACTERISTICS
PARAMETER
Address and control input setup time (slow slew
rate)
Address and Control input pulse width (for
each input)
LOAD MODE REGISTER command cycle time
DQ-DQS hold, DQS to first DQ to go non-valid,
per access
Data hold skew factor
ACTIVE to PRECHARGE command
ACTIVE to READ with Auto precharge
command
ACTIVE to ACTIVE/AUTO REFRESH command
period
AUTO REFRESH command period 256MB,
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command
interval
Average periodic refresh interval 256MB
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
AC Operating Conditions (Continued)
DD
512MB, 1GB
2GB
256MB
512MB, 1GB,
2GB
512MB, 1GB,
2GB
SYMBOL
t
t
WPRES
t
t
t
t
t
t
t
t
WPRE
t
t
t
WPST
t
t
t
t
t
XSNR
XSRD
MRD
t
RPRE
REFC
RPST
t
WTR
t
QHS
RAP
RCD
RRD
REFI
VTD
IPW
RAS
t
t
t
RFC
QH
WR
na
RC
IS
RP
S
t
19
256MB, 512MB, 1GB, 2GB (x64, DR)
MIN
t
0.80
0.25
HP -
QHS
120
t
200
2.2
0.9
0.4
0.4
12
42
15
60
75
15
15
12
15
QH -
75
0
1
0
-335
T
t
A
DQSQ
70,000
MAX
140.6
0.55
70.3
15.6
1.1
0.6
0.6
7.8
+70°C; V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM UDIMM
t
MIN
t
0.25
HP -
QHS
120
t
200
2.2
0.9
0.4
0.4
15
40
15
60
75
15
15
15
15
75
DD
QH -
1
0
1
0
-262
= V
t
DQSQ
120,000
DD
MAX
140.6
0.75
70.3
15.6
1.1
0.6
0.6
7.8
Q = +2.5V ±0.2V
t
t
MIN
0.25
QHS
HP -
120
t
200
2.2
0.9
0.4
0.4
15
40
20
65
75
20
20
15
15
QH -
75
-26A/-265
1
0
1
0
t
DQSQ
120,000
MAX
140.6
0.75
70.3
15.6
1.1
0.6
0.6
7.8
©2004 Micron Technology, Inc.
UNITS NOTES
t
t
t
t
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
ns
ns
CK
CK
CK
CK
CK
CK
22, 23
31, 49
18, 19
12
44
38
38
17
22
21
21
21
21