MT18VDDF12872G-335D3 Micron Technology Inc, MT18VDDF12872G-335D3 Datasheet
MT18VDDF12872G-335D3
Specifications of MT18VDDF12872G-335D3
Related parts for MT18VDDF12872G-335D3
MT18VDDF12872G-335D3 Summary of contents
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... ECC, SR) 184-PIN DDR SDRAM RDIMM MT18VDDF6472 – 512MB MT18VDDF12872 – 1GB For the latest data sheet, please refer to the Micron site: www.micron.com/products/modules Figure 1: 184-Pin DIMM (MO-206) Standard PCB 1.125in. (28.58mm) Alternate PCB 1.125in. (28.58mm) Very Low Profile 0.72in. (18.29mm) OPTIONS • ...
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... MT18VDDF12872G-335__ MT18VDDF12872Y-335__ MT18VDDF12872G-262__ MT18VDDF12872Y-262__ MT18VDDF12872G-26A__ MT18VDDF12872Y-26A__ MT18VDDF12872G-265__ MT18VDDF12872Y-265__ MT18VDDF12872G-202__ MT18VDDF12872Y-202__ NOTE: All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult factory for current revision codes. Example: MT18VDDF6472G-265B1. pdf: 09005aef8074e85b, source: 09005aef8072fe49 DDF18C64_128x72G.fm - Rev. C 11/04 EN CONFIGURATION ...
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Table 3: Pin Assignment (184-Pin DIMM Front) PIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL DQ17 47 REF 2 DQ0 25 DQS2 DQ1 DQS0 ...
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Table 5: Pin Descriptions Pin numbers may not correlate with symbols. Refer to Pin Assignment Tables for pin number and symbol information. PIN NUMBERS SYMBOL 10 RESET# 63, 65, 154 WE#, CAS#, RAS# 137, 138 CK0, CK0# 21 157 52, ...
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Table 5: Pin Descriptions Pin numbers may not correlate with symbols. Refer to Pin Assignment Tables for pin number and symbol information. PIN NUMBERS SYMBOL 12,13, 19, 20, DQ0–DQ63 23, 24, 28, 31, 33, 35, 39, ...
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... V DD SA0 SA1 SA2 RESET# Standard modules use the following DDR SDRAM devices: MT46V64M4FG (512MB); MT46V128M4FG (1GB) Lead-free modules use the following DDR SDRAM devices: MT46V64M4BG (512MB); MT46V128M4BG (1GB) 6 512MB, 1GB (x72, ECC, SR) 184-PIN DDR SDRAM RDIMM U22 U20 U15 U14 ...
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... U12 SA0 SA1 SA2 RESET# Standard modules use the following DDR SDRAM devices: MT46V64M4FG (512MB); MT46V128M4FG (1GB) Lead-free modules use the following DDR SDRAM devices: MT46V64M4BG (512MB); MT46V128M4BG (1GB) 7 512MB, 1GB (x72, ECC, SR) 184-PIN DDR SDRAM RDIMM DQS CS U24 DQS CS U23 ...
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... SA1 SA2 Standard modules use the following DDR SDRAM devices MT46V64M4FG (512MB); MT46V128M4FG (1GB) Lead-free modules use the following DDR SDRAM devices: MT46V64M4BG (512MB); MT46V128M4BG (1GB) Micron Technology, Inc., reserves the right to change products or specifications without notice. 8 512MB, 1GB (x72, ECC, SR) ...
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... DDR SDRAM modules use internally configured quad-bank DDR SDRAM devices. DDR SDRAM modules use a double data rate archi- tecture to achieve high-speed operation. The double data rate architecture is essentially a 2n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins ...
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Vio- lating either of these requirements will result in unspecified operation. Mode register bits A0–A2 specify the burst length, A3 specifies the type of burst (sequential or inter- leaved), A4–A6 specify the CAS latency, ...
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Table 6: Burst Definition Table ORDER OF ACCESSES WITHIN STARTING BURST COLUMN TYPE = LENGTH ADDRESS SEQUENTIAL 0 0-1-2 1-2-3 2-3-0 3-0-1 ...
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DLL, it should always be followed by a LOAD MODE REGISTER command to select normal operat- ing mode. All other combinations of values for A7–A12 are reserved for future use and/or test modes. Test modes and reserved states should ...
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Commands Table 8, Commands Truth Table, and Table 9, DM Operation Truth Table, provide a general reference of available commands. For a more detailed description Table 8: Commands Truth Table CKE is HIGH for all commands shown except SELF REFRESH; ...
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Absolute Maximum Ratings Stresses greater than those listed may cause perma- nent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the opera- ...
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Table 12: IDD Specifications and Conditions – 512MB DDR SDRAM components only Notes: 1–5, 8, 10, 12, 48; notes appear on pages 21–24; 0°C PARAMETER/CONDITION OPERATING CURRENT: One device bank; Active-Precharge (MIN); CK ...
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Table 13: IDD Specifications and Conditions – 1GB DDR SDRAM components only Notes: 1–5, 8, 10, 12, 48; notes appear on pages 21–24; 0°C PARAMETER/CONDITION OPERATING CURRENT: One device bank; Active-Precharge (MIN); CK ...
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Table 14: Capacitance Note: 11; notes appear on pages 21–24 PARAMETER Input/Output Capacitance: DQ, DQS Input Capacitance: Command and Address, S#, CKE Input Capacitance: CK, CK# Table 15: DDR SDRAM Component Electrical Characteristics and Recommended AC Operating Conditions (-335, -262) ...
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Table 15: DDR SDRAM Component Electrical Characteristics and Recommended AC Operating Conditions (-335, -262) (Continued) Notes: 1–5, 12-15, 29, 49; notes appear on pages 21–24; 0°C AC CHARACTERISTICS PARAMETER DQS read preamble DQS read postamble ACTIVE bank a to ACTIVE ...
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Table 16: DDR SDRAM Component Electrical Characteristics and Recommended AC Operating Conditions (-26A, -265, -202) Notes: 1–5, 12-15, 29, 49; notes appear on pages 21–24; 0°C AC CHARACTERISTICS PARAMETER Access window of DQs from CK/CK# CK high-level width CK low-level ...
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Table 16: DDR SDRAM Component Electrical Characteristics and Recommended AC Operating Conditions (-26A, -265, -202) (Continued) Notes: 1–5, 12-15, 29, 49; notes appear on pages 21–24; 0°C AC CHARACTERISTICS PARAMETER REFRESH to REFRESH command interval Average periodic refresh interval Terminating ...
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Notes 1. All voltages referenced Tests for AC timing and electrical AC and DC DD characteristics may be conducted at nominal ref- erence/supply voltage levels, but the related spec- ifications and device operation are ...
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DRAM controller greater than eight refresh cycles is not allowed. 22. The valid data window is derived by achieving t t other specifications CK/2 ...
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Any positive glitch must be less than 1/3 of the clock and not more than +400mV or 2.9V, which- ever is less. Any negative glitch must be less than 1/3 of the clock cycle and not exceed either - ...
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I 2N specifies the DQ, DQS, and driven to a valid high or low logic level. I similar except address and control inputs to remain stable. Although I 2 ...
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Initialization To ensure device operation the DRAM must be ini- tialized as described below: 1. Simultaneously apply power Apply V and then V power. REF TT 3. Assert and hold CKE at a LVCMOS logic low. 4. ...
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Table 17: PLL Clock Driver Timing Requirements and Switching Characteristics Note: 1 PARAMETER SYMBOL Operating Clock Frequency Input Duty Cycle Stabilization Time Cycle to Cycle Jitter Static Phase Offset Output Clock Skew Period Jitter Half-Period Jitter t Input Clock Slew ...
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Table 18: Register Timing Requirements and Switching Characteristics Note: 1 REGISTER SYMBOL PARAMERTER f Clock Frequency clock t Clock to Output Time pd t Reset to Output Time PHL t Pulse Duration w SSTL (bit pattern t Differential Inputs Active ...
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... NOTE: 1. Micron Technology, Inc. recommends a minimum air flow of 1 meter/second (~197 LFM) across all modules. 2. The component case temperature measurements shown above were obtained experimentally. The typical system to be used for experimental purposes is a dual-processor 600 MHz work station, fully loaded, with four comparable registered memory modules ...
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SPD Clock and Data Conventions Data states on the SDA line can change only during SCL LOW. SDA state changes during SCL HIGH are reserved for indicating start and stop conditions (as shown in Figure 14, Data Validity, and Figure ...
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Table 19: EEPROM Device Select Code The most significant bit (b7) is sent first SELECT CODE Memory Area Select Code (two arrays) Protection Register Select Code Table 20: EEPROM Operating Modes MODE RW BIT Current Address Read Random Address Read ...
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Table 21: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced DDSPD PARAMETER/CONDITION SUPPLY VOLTAGE INPUT HIGH VOLTAGE: Logic 1; All inputs INPUT LOW VOLTAGE: Logic 0; All inputs OUTPUT LOW VOLTAGE 3mA ...
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Table 23: Serial Presence-Detect Matrix “1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes appear on page 34 BYTE DESCRIPTION 0 Number of SPD Bytes Used By Micron 1 Total Number of Bytes In SPD Device 2 Fundamental Memory Type ...
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Table 23: Serial Presence-Detect Matrix “1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes appear on page 34 BYTE DESCRIPTION 30 Minimum RAS# Pulse Width, 31 Module Rank Density 32 Address and Command Setup Time Address and Command ...
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... The value of RAS used for -26A/-265 modules is calculated from 3. The JEDEC SPD specification allows fast or slow slew rate values for these bytes. The worst-case (slow slew rate) value is represented here. Systems requiring the fast slew rate setup and hold values are supported, provided the faster mini- mum slew rate is met ...
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Figure 18: 184-Pin DIMM Dimensions – Low-Profile PCB 0.079 (2.00) R (4X 0.098 (2.50) D (2X) 0.091 (2.30) TYP. PIN 1 0.050 (1.27) 0.091 (2.30) TYP. U12 U13 PIN 184 Figure 19: 184-Pin DIMM Dimensions – Alternate Low-Profile ...
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Figure 20: 184-Pin DIMM Dimensions – Very Low-Profile PCB 0.079 (2.00) R (4X 0.098 (2.50) D (2X) 0.091 (2.30) TYP. PIN 1 0.050 (1.27) TYP. 0.091 (2.30) 2.55 (64.77) TYP. U12 U13 U14 PIN 184 NOTE: All ...